Measurement of carrier lifetime in micron-scaled materials using resonant microwave circuits
A method for measuring carrier dynamics in micron-scale optoelectronic materials based on time-resolved microwave reflection is reported. Compared to a standard time-resolved photoluminescence approach, the authors show a 105 improvement in sensitivity when measuring lifetimes in a semiconductor pix...
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| Autores principales: | , , , , , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2019
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/c325ae819eb74b8c804a9e6afad7051b |
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| Sumario: | A method for measuring carrier dynamics in micron-scale optoelectronic materials based on time-resolved microwave reflection is reported. Compared to a standard time-resolved photoluminescence approach, the authors show a 105 improvement in sensitivity when measuring lifetimes in a semiconductor pixel. |
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