Measurement of carrier lifetime in micron-scaled materials using resonant microwave circuits

A method for measuring carrier dynamics in micron-scale optoelectronic materials based on time-resolved microwave reflection is reported. Compared to a standard time-resolved photoluminescence approach, the authors show a 105 improvement in sensitivity when measuring lifetimes in a semiconductor pix...

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Autores principales: Sukrith Dev, Yinan Wang, Kyounghwan Kim, Marziyeh Zamiri, Clark Kadlec, Michael Goldflam, Samuel Hawkins, Eric Shaner, Jin Kim, Sanjay Krishna, Monica Allen, Jeffery Allen, Emanuel Tutuc, Daniel Wasserman
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Lenguaje:EN
Publicado: Nature Portfolio 2019
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Acceso en línea:https://doaj.org/article/c325ae819eb74b8c804a9e6afad7051b
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spelling oai:doaj.org-article:c325ae819eb74b8c804a9e6afad7051b2021-12-02T15:35:57ZMeasurement of carrier lifetime in micron-scaled materials using resonant microwave circuits10.1038/s41467-019-09602-22041-1723https://doaj.org/article/c325ae819eb74b8c804a9e6afad7051b2019-04-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-09602-2https://doaj.org/toc/2041-1723A method for measuring carrier dynamics in micron-scale optoelectronic materials based on time-resolved microwave reflection is reported. Compared to a standard time-resolved photoluminescence approach, the authors show a 105 improvement in sensitivity when measuring lifetimes in a semiconductor pixel.Sukrith DevYinan WangKyounghwan KimMarziyeh ZamiriClark KadlecMichael GoldflamSamuel HawkinsEric ShanerJin KimSanjay KrishnaMonica AllenJeffery AllenEmanuel TutucDaniel WassermanNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-7 (2019)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Sukrith Dev
Yinan Wang
Kyounghwan Kim
Marziyeh Zamiri
Clark Kadlec
Michael Goldflam
Samuel Hawkins
Eric Shaner
Jin Kim
Sanjay Krishna
Monica Allen
Jeffery Allen
Emanuel Tutuc
Daniel Wasserman
Measurement of carrier lifetime in micron-scaled materials using resonant microwave circuits
description A method for measuring carrier dynamics in micron-scale optoelectronic materials based on time-resolved microwave reflection is reported. Compared to a standard time-resolved photoluminescence approach, the authors show a 105 improvement in sensitivity when measuring lifetimes in a semiconductor pixel.
format article
author Sukrith Dev
Yinan Wang
Kyounghwan Kim
Marziyeh Zamiri
Clark Kadlec
Michael Goldflam
Samuel Hawkins
Eric Shaner
Jin Kim
Sanjay Krishna
Monica Allen
Jeffery Allen
Emanuel Tutuc
Daniel Wasserman
author_facet Sukrith Dev
Yinan Wang
Kyounghwan Kim
Marziyeh Zamiri
Clark Kadlec
Michael Goldflam
Samuel Hawkins
Eric Shaner
Jin Kim
Sanjay Krishna
Monica Allen
Jeffery Allen
Emanuel Tutuc
Daniel Wasserman
author_sort Sukrith Dev
title Measurement of carrier lifetime in micron-scaled materials using resonant microwave circuits
title_short Measurement of carrier lifetime in micron-scaled materials using resonant microwave circuits
title_full Measurement of carrier lifetime in micron-scaled materials using resonant microwave circuits
title_fullStr Measurement of carrier lifetime in micron-scaled materials using resonant microwave circuits
title_full_unstemmed Measurement of carrier lifetime in micron-scaled materials using resonant microwave circuits
title_sort measurement of carrier lifetime in micron-scaled materials using resonant microwave circuits
publisher Nature Portfolio
publishDate 2019
url https://doaj.org/article/c325ae819eb74b8c804a9e6afad7051b
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