Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet
Reduction of power consumption for magnetization reversal in spintronic memory devices is of great importance. Here, Munetaet al. report the gate electric-field assisted control of the magnetic anisotropy of the density of states using quantum size effect in GaMnAs.
Guardado en:
| Autores principales: | , , , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2017
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/c3d93914213244d0bea559af94fe9baa |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| Sumario: | Reduction of power consumption for magnetization reversal in spintronic memory devices is of great importance. Here, Munetaet al. report the gate electric-field assisted control of the magnetic anisotropy of the density of states using quantum size effect in GaMnAs. |
|---|