Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet

Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet

Reduction of power consumption for magnetization reversal in spintronic memory devices is of great importance. Here, Munetaet al. report the gate electric-field assisted control of the magnetic anisotropy of the density of states using quantum size effect in GaMnAs.

Guardado en:
Detalles Bibliográficos
Autores principales: Iriya Muneta, Toshiki Kanaki, Shinobu Ohya, Masaaki Tanaka
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
Materias:
Science
Q
Acceso en línea:https://doaj.org/article/c3d93914213244d0bea559af94fe9baa
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
id oai:doaj.org-article:c3d93914213244d0bea559af94fe9baa
record_format dspace
spelling oai:doaj.org-article:c3d93914213244d0bea559af94fe9baa2021-12-02T14:42:21ZArtificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet10.1038/ncomms153872041-1723https://doaj.org/article/c3d93914213244d0bea559af94fe9baa2017-05-01T00:00:00Zhttps://doi.org/10.1038/ncomms15387https://doaj.org/toc/2041-1723Reduction of power consumption for magnetization reversal in spintronic memory devices is of great importance. Here, Munetaet al. report the gate electric-field assisted control of the magnetic anisotropy of the density of states using quantum size effect in GaMnAs.Iriya MunetaToshiki KanakiShinobu OhyaMasaaki TanakaNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-8 (2017)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Iriya Muneta
Toshiki Kanaki
Shinobu Ohya
Masaaki Tanaka
Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet
description Reduction of power consumption for magnetization reversal in spintronic memory devices is of great importance. Here, Munetaet al. report the gate electric-field assisted control of the magnetic anisotropy of the density of states using quantum size effect in GaMnAs.
format article
author Iriya Muneta
Toshiki Kanaki
Shinobu Ohya
Masaaki Tanaka
author_facet Iriya Muneta
Toshiki Kanaki
Shinobu Ohya
Masaaki Tanaka
author_sort Iriya Muneta
title Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet
title_short Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet
title_full Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet
title_fullStr Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet
title_full_unstemmed Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet
title_sort artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet
publisher Nature Portfolio
publishDate 2017
url https://doaj.org/article/c3d93914213244d0bea559af94fe9baa
work_keys_str_mv AT iriyamuneta artificialcontrolofthebiasvoltagedependenceoftunnellinganisotropicmagnetoresistanceusingquantizationinasinglecrystalferromagnet
AT toshikikanaki artificialcontrolofthebiasvoltagedependenceoftunnellinganisotropicmagnetoresistanceusingquantizationinasinglecrystalferromagnet
AT shinobuohya artificialcontrolofthebiasvoltagedependenceoftunnellinganisotropicmagnetoresistanceusingquantizationinasinglecrystalferromagnet
AT masaakitanaka artificialcontrolofthebiasvoltagedependenceoftunnellinganisotropicmagnetoresistanceusingquantizationinasinglecrystalferromagnet
_version_ 1718389715448627200

Ejemplares similares