Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet

Reduction of power consumption for magnetization reversal in spintronic memory devices is of great importance. Here, Munetaet al. report the gate electric-field assisted control of the magnetic anisotropy of the density of states using quantum size effect in GaMnAs.

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Autores principales: Iriya Muneta, Toshiki Kanaki, Shinobu Ohya, Masaaki Tanaka
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/c3d93914213244d0bea559af94fe9baa
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