Strong tribo-piezoelectric effect in bilayer indium nitride (InN)

Abstract The high electronegativity between the atoms of two-dimensional (2D) group-III nitrides makes them attractive to demonstrating a strong out-of-plane piezo-electricity effect. Energy harvesting devices can be predicted by cultivating such salient piezoelectric features. This work explores th...

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Autores principales:	Md. Sherajul Islam, Md. Yasir Zamil, Md. Rayid Hasan Mojumder, Catherine Stampfl, Jeongwon Park
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/c3e78818cf75443a91fee21d15f40737
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spelling	oai:doaj.org-article:c3e78818cf75443a91fee21d15f407372021-12-02T18:14:22ZStrong tribo-piezoelectric effect in bilayer indium nitride (InN)10.1038/s41598-021-98130-52045-2322https://doaj.org/article/c3e78818cf75443a91fee21d15f407372021-09-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-98130-5https://doaj.org/toc/2045-2322Abstract The high electronegativity between the atoms of two-dimensional (2D) group-III nitrides makes them attractive to demonstrating a strong out-of-plane piezo-electricity effect. Energy harvesting devices can be predicted by cultivating such salient piezoelectric features. This work explores the tribo-piezoelectric properties of 2D-indium nitride (InN) as a promising candidate in nanogenerator applications by means of first-principles calculations. In-plane interlayer sliding between two InN monolayers leads to a noticeable rise of vertical piezoelectricity. The vertical resistance between the InN bilayer renders tribological energy by the sliding effect. During the vertical sliding, a shear strength of 6.6–9.7 GPa is observed between the monolayers. The structure can be used as a tribo-piezoelectric transducer to extract force and stress from the generated out-of-plane tribo-piezoelectric energy. The A–A stacking of the bilayer InN elucidates the highest out-of-plane piezoelectricity. Any decrease in the interlayer distance between the monolayers improves the out-of-plane polarization and thus, increases the inductive voltage generation. Vertical compression of bilayer InN produces an inductive voltage in the range of 0.146–0.196 V. Utilizing such a phenomenon, an InN-based bilayer compression-sliding nanogenerator is proposed, which can tune the generated tribo-piezoelectric energy by compressing the interlayer distance between the InN monolayers. The considered model can render a maximum output power density of ~ 73 mWcm−2 upon vertical sliding.Md. Sherajul IslamMd. Yasir ZamilMd. Rayid Hasan MojumderCatherine StampflJeongwon ParkNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-12 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Md. Sherajul Islam Md. Yasir Zamil Md. Rayid Hasan Mojumder Catherine Stampfl Jeongwon Park Strong tribo-piezoelectric effect in bilayer indium nitride (InN)
description	Abstract The high electronegativity between the atoms of two-dimensional (2D) group-III nitrides makes them attractive to demonstrating a strong out-of-plane piezo-electricity effect. Energy harvesting devices can be predicted by cultivating such salient piezoelectric features. This work explores the tribo-piezoelectric properties of 2D-indium nitride (InN) as a promising candidate in nanogenerator applications by means of first-principles calculations. In-plane interlayer sliding between two InN monolayers leads to a noticeable rise of vertical piezoelectricity. The vertical resistance between the InN bilayer renders tribological energy by the sliding effect. During the vertical sliding, a shear strength of 6.6–9.7 GPa is observed between the monolayers. The structure can be used as a tribo-piezoelectric transducer to extract force and stress from the generated out-of-plane tribo-piezoelectric energy. The A–A stacking of the bilayer InN elucidates the highest out-of-plane piezoelectricity. Any decrease in the interlayer distance between the monolayers improves the out-of-plane polarization and thus, increases the inductive voltage generation. Vertical compression of bilayer InN produces an inductive voltage in the range of 0.146–0.196 V. Utilizing such a phenomenon, an InN-based bilayer compression-sliding nanogenerator is proposed, which can tune the generated tribo-piezoelectric energy by compressing the interlayer distance between the InN monolayers. The considered model can render a maximum output power density of ~ 73 mWcm−2 upon vertical sliding.
format	article
author	Md. Sherajul Islam Md. Yasir Zamil Md. Rayid Hasan Mojumder Catherine Stampfl Jeongwon Park
author_facet	Md. Sherajul Islam Md. Yasir Zamil Md. Rayid Hasan Mojumder Catherine Stampfl Jeongwon Park
author_sort	Md. Sherajul Islam
title	Strong tribo-piezoelectric effect in bilayer indium nitride (InN)
title_short	Strong tribo-piezoelectric effect in bilayer indium nitride (InN)
title_full	Strong tribo-piezoelectric effect in bilayer indium nitride (InN)
title_fullStr	Strong tribo-piezoelectric effect in bilayer indium nitride (InN)
title_full_unstemmed	Strong tribo-piezoelectric effect in bilayer indium nitride (InN)
title_sort	strong tribo-piezoelectric effect in bilayer indium nitride (inn)
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/c3e78818cf75443a91fee21d15f40737
work_keys_str_mv	AT mdsherajulislam strongtribopiezoelectriceffectinbilayerindiumnitrideinn AT mdyasirzamil strongtribopiezoelectriceffectinbilayerindiumnitrideinn AT mdrayidhasanmojumder strongtribopiezoelectriceffectinbilayerindiumnitrideinn AT catherinestampfl strongtribopiezoelectriceffectinbilayerindiumnitrideinn AT jeongwonpark strongtribopiezoelectriceffectinbilayerindiumnitrideinn
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Strong tribo-piezoelectric effect in bilayer indium nitride (InN)

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