Bandgap atomistic calculations on hydrogen-passivated GeSi nanocrystals
Abstract We present a detailed study regarding the bandgap dependence on diameter and composition of spherical Ge-rich Ge x Si1−x nanocrystals (NCs). For this, we conducted a series of atomistic density functional theory (DFT) calculations on H-passivated NCs of Ge-rich GeSi random alloys, with Ge a...
Guardado en:
Autores principales: | Ovidiu Cojocaru, Ana-Maria Lepadatu, George Alexandru Nemnes, Toma Stoica, Magdalena Lidia Ciurea |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2021
|
Materias: | |
Acceso en línea: | https://doaj.org/article/c3f5e3877bb3438fa7f5827470cbc551 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Nanocrystallized Ge-Rich SiGe-HfO<sub>2</sub> Highly Photosensitive in Short-Wave Infrared
por: Catalin Palade, et al.
Publicado: (2021) -
Atomistic insights into the nucleation and growth of platinum on palladium nanocrystals
por: Wenpei Gao, et al.
Publicado: (2021) -
Atomistic understanding of cation exchange in PbS nanocrystals using simulations with pseudoligands
por: Zhaochuan Fan, et al.
Publicado: (2016) -
Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures
por: Denis Rainko, et al.
Publicado: (2018) -
Hydrogen embrittlement of grain boundaries in nickel: an atomistic study
por: Shan Huang, et al.
Publicado: (2017)