Cita APA (7a ed.)

Ando, Y., Makisako, R., Takahashi, H., Wakejima, A., & Suda, J. (2021). Fabrication of 150‐nm AlGaN/GaN field‐plated High Electron Mobility Transistors using i‐line stepper. Wiley.

Cita Chicago Style (17a ed.)

Ando, Yuji, Ryutaro Makisako, Hidemasa Takahashi, Akio Wakejima, y Jun Suda. Fabrication of 150‐nm AlGaN/GaN Field‐plated High Electron Mobility Transistors Using I‐line Stepper. Wiley, 2021.

Cita MLA (8a ed.)

Ando, Yuji, et al. Fabrication of 150‐nm AlGaN/GaN Field‐plated High Electron Mobility Transistors Using I‐line Stepper. Wiley, 2021.