Style de citation APA (7e éd.)

Ando, Y., Makisako, R., Takahashi, H., Wakejima, A., & Suda, J. (2021). Fabrication of 150‐nm AlGaN/GaN field‐plated High Electron Mobility Transistors using i‐line stepper. Wiley.

Style de citation Chicago (17e éd.)

Ando, Yuji, Ryutaro Makisako, Hidemasa Takahashi, Akio Wakejima, et Jun Suda. Fabrication of 150‐nm AlGaN/GaN Field‐plated High Electron Mobility Transistors Using I‐line Stepper. Wiley, 2021.

Style de citation MLA (8e éd.)

Ando, Yuji, et al. Fabrication of 150‐nm AlGaN/GaN Field‐plated High Electron Mobility Transistors Using I‐line Stepper. Wiley, 2021.