Demonstration of on-chip gigahertz acousto-optic modulation at near-visible wavelengths

Lithium niobate integrated photonics has recently received significant attention because it exploits the attractive properties of lithium niobate on an integrated platform which provides strong optical confinement as well as high photonic integration density. Although many optical functionalities of...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Yu Yue, Wang Lai, Sun Xiankai
Formato: article
Lenguaje:EN
Publicado: De Gruyter 2021
Materias:
Acceso en línea:https://doaj.org/article/c458287926204cd2b39c4b264804a704
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
id oai:doaj.org-article:c458287926204cd2b39c4b264804a704
record_format dspace
spelling oai:doaj.org-article:c458287926204cd2b39c4b264804a7042021-12-05T14:10:56ZDemonstration of on-chip gigahertz acousto-optic modulation at near-visible wavelengths2192-861410.1515/nanoph-2021-0330https://doaj.org/article/c458287926204cd2b39c4b264804a7042021-09-01T00:00:00Zhttps://doi.org/10.1515/nanoph-2021-0330https://doaj.org/toc/2192-8614Lithium niobate integrated photonics has recently received significant attention because it exploits the attractive properties of lithium niobate on an integrated platform which provides strong optical confinement as well as high photonic integration density. Although many optical functionalities of lithium niobate have been demonstrated on a chip in the telecom band, the visible and near-visible regimes are less explored. This is mainly because devices with a relatively smaller feature size are required which increases fabrication difficulty. Here, we explored the acousto-optic effect of lithium niobate on a chip at near-visible wavelengths (765–781 nm) and demonstrated acousto-optic modulation with the modulation frequency up to 2.44 GHz. We adopted an etchless process for the device fabrication and applied the principle of bound states in the continuum to optimize the device performance. By demonstrating functionality at near-visible wavelengths, our devices will enable many on-chip applications ranging from frequency metrology to quantum information processing.Yu YueWang LaiSun XiankaiDe Gruyterarticleacousto-optic modulationbound states in the continuumvisible photonicsPhysicsQC1-999ENNanophotonics, Vol 10, Iss 17, Pp 4323-4329 (2021)
institution DOAJ
collection DOAJ
language EN
topic acousto-optic modulation
bound states in the continuum
visible photonics
Physics
QC1-999
spellingShingle acousto-optic modulation
bound states in the continuum
visible photonics
Physics
QC1-999
Yu Yue
Wang Lai
Sun Xiankai
Demonstration of on-chip gigahertz acousto-optic modulation at near-visible wavelengths
description Lithium niobate integrated photonics has recently received significant attention because it exploits the attractive properties of lithium niobate on an integrated platform which provides strong optical confinement as well as high photonic integration density. Although many optical functionalities of lithium niobate have been demonstrated on a chip in the telecom band, the visible and near-visible regimes are less explored. This is mainly because devices with a relatively smaller feature size are required which increases fabrication difficulty. Here, we explored the acousto-optic effect of lithium niobate on a chip at near-visible wavelengths (765–781 nm) and demonstrated acousto-optic modulation with the modulation frequency up to 2.44 GHz. We adopted an etchless process for the device fabrication and applied the principle of bound states in the continuum to optimize the device performance. By demonstrating functionality at near-visible wavelengths, our devices will enable many on-chip applications ranging from frequency metrology to quantum information processing.
format article
author Yu Yue
Wang Lai
Sun Xiankai
author_facet Yu Yue
Wang Lai
Sun Xiankai
author_sort Yu Yue
title Demonstration of on-chip gigahertz acousto-optic modulation at near-visible wavelengths
title_short Demonstration of on-chip gigahertz acousto-optic modulation at near-visible wavelengths
title_full Demonstration of on-chip gigahertz acousto-optic modulation at near-visible wavelengths
title_fullStr Demonstration of on-chip gigahertz acousto-optic modulation at near-visible wavelengths
title_full_unstemmed Demonstration of on-chip gigahertz acousto-optic modulation at near-visible wavelengths
title_sort demonstration of on-chip gigahertz acousto-optic modulation at near-visible wavelengths
publisher De Gruyter
publishDate 2021
url https://doaj.org/article/c458287926204cd2b39c4b264804a704
work_keys_str_mv AT yuyue demonstrationofonchipgigahertzacoustoopticmodulationatnearvisiblewavelengths
AT wanglai demonstrationofonchipgigahertzacoustoopticmodulationatnearvisiblewavelengths
AT sunxiankai demonstrationofonchipgigahertzacoustoopticmodulationatnearvisiblewavelengths
_version_ 1718371566965751808