Thermal neutron transmutation doping of GaN semiconductors

Abstract High quality Ge doping of GaN is demonstrated using primarily thermal neutrons for the first time. In this study, GaN was doped with Ge to concentrations from 1016 Ge atoms/cm3 to 1018 Ge atoms/cm3. The doping concentrations were measured using gamma-ray spectroscopy and confirmed using SIM...

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Autores principales:	R. Barber, Q. Nguyen, J. Brockman, J. Gahl, J. Kwon
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/c4721638264a410ebda9ae01d8d216a9
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spelling	oai:doaj.org-article:c4721638264a410ebda9ae01d8d216a92021-12-02T18:51:35ZThermal neutron transmutation doping of GaN semiconductors10.1038/s41598-020-72862-22045-2322https://doaj.org/article/c4721638264a410ebda9ae01d8d216a92020-10-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-72862-2https://doaj.org/toc/2045-2322Abstract High quality Ge doping of GaN is demonstrated using primarily thermal neutrons for the first time. In this study, GaN was doped with Ge to concentrations from 1016 Ge atoms/cm3 to 1018 Ge atoms/cm3. The doping concentrations were measured using gamma-ray spectroscopy and confirmed using SIMS analysis. The data from SIMS analysis also show consistent Ge doping concentration throughout the depth of the GaN wafers. After irradiation, the GaN was annealed in a nitrogen environment at 950 °C for 30 min. The neutron doping process turns out to produce spatially uniform doping throughout the whole volume of the GaN substrate.R. BarberQ. NguyenJ. BrockmanJ. GahlJ. KwonNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 10, Iss 1, Pp 1-8 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q R. Barber Q. Nguyen J. Brockman J. Gahl J. Kwon Thermal neutron transmutation doping of GaN semiconductors
description	Abstract High quality Ge doping of GaN is demonstrated using primarily thermal neutrons for the first time. In this study, GaN was doped with Ge to concentrations from 1016 Ge atoms/cm3 to 1018 Ge atoms/cm3. The doping concentrations were measured using gamma-ray spectroscopy and confirmed using SIMS analysis. The data from SIMS analysis also show consistent Ge doping concentration throughout the depth of the GaN wafers. After irradiation, the GaN was annealed in a nitrogen environment at 950 °C for 30 min. The neutron doping process turns out to produce spatially uniform doping throughout the whole volume of the GaN substrate.
format	article
author	R. Barber Q. Nguyen J. Brockman J. Gahl J. Kwon
author_facet	R. Barber Q. Nguyen J. Brockman J. Gahl J. Kwon
author_sort	R. Barber
title	Thermal neutron transmutation doping of GaN semiconductors
title_short	Thermal neutron transmutation doping of GaN semiconductors
title_full	Thermal neutron transmutation doping of GaN semiconductors
title_fullStr	Thermal neutron transmutation doping of GaN semiconductors
title_full_unstemmed	Thermal neutron transmutation doping of GaN semiconductors
title_sort	thermal neutron transmutation doping of gan semiconductors
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/c4721638264a410ebda9ae01d8d216a9
work_keys_str_mv	AT rbarber thermalneutrontransmutationdopingofgansemiconductors AT qnguyen thermalneutrontransmutationdopingofgansemiconductors AT jbrockman thermalneutrontransmutationdopingofgansemiconductors AT jgahl thermalneutrontransmutationdopingofgansemiconductors AT jkwon thermalneutrontransmutationdopingofgansemiconductors
_version_	1718377410884272128

Thermal neutron transmutation doping of GaN semiconductors

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