Magnetic-field-induced insulator–metal transition in W-doped VO2 at 500 T

Magnetic-field-induced insulator–metal transition in W-doped VO2 at 500 T

Vanadium dioxide exhibits a metal-insulator (MI) transition. The mechanism driving this behaviour has long been a subject of debate. Here, the authors show that the MI transition in heavily doped vanadium dioxide can be driven by a magnetic field, suggesting the MI transition is due to structural in...

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Autores principales: Yasuhiro H. Matsuda, Daisuke Nakamura, Akihiko Ikeda, Shojiro Takeyama, Yuki Suga, Hayato Nakahara, Yuji Muraoka
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2020
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Acceso en línea:https://doaj.org/article/c4e0d8427eba44ed8937a73ab73c31e6
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