CeO2 single buffer layer for YBCO RABiTS coated conductors

Chemical solution deposition techniques are promising approaches to achieve epitaxial oxide thin films at a low cost and easy scaling for YBa2Cu3O7 coated conductors. High quality CeO2 buffer layers were prepared by CSD on Ni RABiTS. The precursor used for the preparation of fluorite CeO2 films w...

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Autores principales:	Mihalache, Valentina, Stefan, N., Miroiu, F.
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2010
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/c5240b9b65144252802aefa3794f9d1d
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spelling	oai:doaj.org-article:c5240b9b65144252802aefa3794f9d1d2021-11-21T12:03:40ZCeO2 single buffer layer for YBCO RABiTS coated conductors2537-63651810-648Xhttps://doaj.org/article/c5240b9b65144252802aefa3794f9d1d2010-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2010/article/4294https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Chemical solution deposition techniques are promising approaches to achieve epitaxial oxide thin films at a low cost and easy scaling for YBa2Cu3O7 coated conductors. High quality CeO2 buffer layers were prepared by CSD on Ni RABiTS. The precursor used for the preparation of fluorite CeO2 films was Ce(III) acetate dissolved in propionic acid. YBCO layers were deposited by pulsed laser deposition (PLD) on CeO2 buffers, leading to a simple low cost architecture NiRABiTS/CeO2 CSD/YBCOPLD. YBCO film epitaxially grown on 181-nm- thick CeO2 buffer exhibited a critical temperature Tc = 90.5 K. Some aspects regarding the correlation between the surface morphology of CeO2 film, the microstructure, and the transport parameters of YBCO film deposited on this buffer are discussed. Mihalache, ValentinaStefan, N.Miroiu, F.D.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 9, Iss 3-4, Pp 358-362 (2010)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Mihalache, Valentina Stefan, N. Miroiu, F. CeO2 single buffer layer for YBCO RABiTS coated conductors
description	Chemical solution deposition techniques are promising approaches to achieve epitaxial oxide thin films at a low cost and easy scaling for YBa2Cu3O7 coated conductors. High quality CeO2 buffer layers were prepared by CSD on Ni RABiTS. The precursor used for the preparation of fluorite CeO2 films was Ce(III) acetate dissolved in propionic acid. YBCO layers were deposited by pulsed laser deposition (PLD) on CeO2 buffers, leading to a simple low cost architecture NiRABiTS/CeO2 CSD/YBCOPLD. YBCO film epitaxially grown on 181-nm- thick CeO2 buffer exhibited a critical temperature Tc = 90.5 K. Some aspects regarding the correlation between the surface morphology of CeO2 film, the microstructure, and the transport parameters of YBCO film deposited on this buffer are discussed.
format	article
author	Mihalache, Valentina Stefan, N. Miroiu, F.
author_facet	Mihalache, Valentina Stefan, N. Miroiu, F.
author_sort	Mihalache, Valentina
title	CeO2 single buffer layer for YBCO RABiTS coated conductors
title_short	CeO2 single buffer layer for YBCO RABiTS coated conductors
title_full	CeO2 single buffer layer for YBCO RABiTS coated conductors
title_fullStr	CeO2 single buffer layer for YBCO RABiTS coated conductors
title_full_unstemmed	CeO2 single buffer layer for YBCO RABiTS coated conductors
title_sort	ceo2 single buffer layer for ybco rabits coated conductors
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2010
url	https://doaj.org/article/c5240b9b65144252802aefa3794f9d1d
work_keys_str_mv	AT mihalachevalentina ceo2singlebufferlayerforybcorabitscoatedconductors AT stefann ceo2singlebufferlayerforybcorabitscoatedconductors AT miroiuf ceo2singlebufferlayerforybcorabitscoatedconductors
_version_	1718419269983666176

CeO2 single buffer layer for YBCO RABiTS coated conductors

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