Performance Enhancement of Large Crossbar Resistive Memories With Complementary and 1D1R-1R1D RRAM Structures

The paper proposes novel solutions to improve the signal and thermal integrity of crossbar arrays of Resistive Random-Access Memories, that are among the most promising technologies for the 3D monolithic integration. These structures suffer from electrothermal issues, due to the heat generated by th...

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Autores principales:	Khitem Lahbacha, Fakhreddine Zayer, Hamdi Belgacem, Wael Dghais, Antonio Maffucci
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2021
Materias:	3-D crossbar RRAM 1D1R-1R1D CRS signal integrity thermal integrity Chemical technology TP1-1185 Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/c6645d9e832943f891b59e63f084f1bd
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spelling	oai:doaj.org-article:c6645d9e832943f891b59e63f084f1bd2021-11-23T00:02:14ZPerformance Enhancement of Large Crossbar Resistive Memories With Complementary and 1D1R-1R1D RRAM Structures2644-129210.1109/OJNANO.2021.3124846https://doaj.org/article/c6645d9e832943f891b59e63f084f1bd2021-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9601273/https://doaj.org/toc/2644-1292The paper proposes novel solutions to improve the signal and thermal integrity of crossbar arrays of Resistive Random-Access Memories, that are among the most promising technologies for the 3D monolithic integration. These structures suffer from electrothermal issues, due to the heat generated by the power dissipation during the write process. This paper explores novel solutions based on new architectures and materials, for managing the issues related to the voltage drop along the interconnects and to thermal crosstalk between memory cells. The analyzed memristor is the 1 Diode - 1 Resistor memory. The two architectural solutions are given by a reverse architecture and a complementary resistive switching one. Compared to conventional architectures, both of them are also reducing the number of layers where the bias is applied. The electrothermal performance of these new structures is compared to that of the reference one, for a case-study given by a 4 × 4 × 4 array. To this end, a full-3D numerical Multiphysics model is implemented and successfully compared against other models in literature. The possibility of changing the interconnect materials is also analyzed. The results of this performance analysis clearly show the benefits of moving to these novel architectures, together with the choice of new materials.Khitem LahbachaFakhreddine ZayerHamdi BelgacemWael DghaisAntonio MaffucciIEEEarticle3-D crossbar RRAM1D1R-1R1DCRSsignal integritythermal integrityChemical technologyTP1-1185Electrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Open Journal of Nanotechnology, Vol 2, Pp 111-119 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	3-D crossbar RRAM 1D1R-1R1D CRS signal integrity thermal integrity Chemical technology TP1-1185 Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	3-D crossbar RRAM 1D1R-1R1D CRS signal integrity thermal integrity Chemical technology TP1-1185 Electrical engineering. Electronics. Nuclear engineering TK1-9971 Khitem Lahbacha Fakhreddine Zayer Hamdi Belgacem Wael Dghais Antonio Maffucci Performance Enhancement of Large Crossbar Resistive Memories With Complementary and 1D1R-1R1D RRAM Structures
description	The paper proposes novel solutions to improve the signal and thermal integrity of crossbar arrays of Resistive Random-Access Memories, that are among the most promising technologies for the 3D monolithic integration. These structures suffer from electrothermal issues, due to the heat generated by the power dissipation during the write process. This paper explores novel solutions based on new architectures and materials, for managing the issues related to the voltage drop along the interconnects and to thermal crosstalk between memory cells. The analyzed memristor is the 1 Diode - 1 Resistor memory. The two architectural solutions are given by a reverse architecture and a complementary resistive switching one. Compared to conventional architectures, both of them are also reducing the number of layers where the bias is applied. The electrothermal performance of these new structures is compared to that of the reference one, for a case-study given by a 4 × 4 × 4 array. To this end, a full-3D numerical Multiphysics model is implemented and successfully compared against other models in literature. The possibility of changing the interconnect materials is also analyzed. The results of this performance analysis clearly show the benefits of moving to these novel architectures, together with the choice of new materials.
format	article
author	Khitem Lahbacha Fakhreddine Zayer Hamdi Belgacem Wael Dghais Antonio Maffucci
author_facet	Khitem Lahbacha Fakhreddine Zayer Hamdi Belgacem Wael Dghais Antonio Maffucci
author_sort	Khitem Lahbacha
title	Performance Enhancement of Large Crossbar Resistive Memories With Complementary and 1D1R-1R1D RRAM Structures
title_short	Performance Enhancement of Large Crossbar Resistive Memories With Complementary and 1D1R-1R1D RRAM Structures
title_full	Performance Enhancement of Large Crossbar Resistive Memories With Complementary and 1D1R-1R1D RRAM Structures
title_fullStr	Performance Enhancement of Large Crossbar Resistive Memories With Complementary and 1D1R-1R1D RRAM Structures
title_full_unstemmed	Performance Enhancement of Large Crossbar Resistive Memories With Complementary and 1D1R-1R1D RRAM Structures
title_sort	performance enhancement of large crossbar resistive memories with complementary and 1d1r-1r1d rram structures
publisher	IEEE
publishDate	2021
url	https://doaj.org/article/c6645d9e832943f891b59e63f084f1bd
work_keys_str_mv	AT khitemlahbacha performanceenhancementoflargecrossbarresistivememorieswithcomplementaryand1d1r1r1drramstructures AT fakhreddinezayer performanceenhancementoflargecrossbarresistivememorieswithcomplementaryand1d1r1r1drramstructures AT hamdibelgacem performanceenhancementoflargecrossbarresistivememorieswithcomplementaryand1d1r1r1drramstructures AT waeldghais performanceenhancementoflargecrossbarresistivememorieswithcomplementaryand1d1r1r1drramstructures AT antoniomaffucci performanceenhancementoflargecrossbarresistivememorieswithcomplementaryand1d1r1r1drramstructures
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Performance Enhancement of Large Crossbar Resistive Memories With Complementary and 1D1R-1R1D RRAM Structures

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