Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors

Abstract Herein, the direct growth of polar orthorhombic phase in Hf0.5Zr0.5O2 (HZO) thin films is reported using Pulsed Laser Deposition (PLD). The growth of HZO onto a preheated (700 °C) silicon substrate mimics the rapid thermal annealing, which allows the formation of smaller crystallites (~9.7 ...

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Autores principales:	Hae Won Cho, Pavan Pujar, Minsu Choi, Seunghun Kang, Seongin Hong, Junwoo Park, Seungho Baek, Yunseok Kim, Jaichan Lee, Sunkook Kim
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/c67e4fae408a46fabc5bd9f59b7d58c4
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spelling	oai:doaj.org-article:c67e4fae408a46fabc5bd9f59b7d58c42021-12-02T17:33:32ZDirect growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors10.1038/s41699-021-00229-w2397-7132https://doaj.org/article/c67e4fae408a46fabc5bd9f59b7d58c42021-04-01T00:00:00Zhttps://doi.org/10.1038/s41699-021-00229-whttps://doaj.org/toc/2397-7132Abstract Herein, the direct growth of polar orthorhombic phase in Hf0.5Zr0.5O2 (HZO) thin films is reported using Pulsed Laser Deposition (PLD). The growth of HZO onto a preheated (700 °C) silicon substrate mimics the rapid thermal annealing, which allows the formation of smaller crystallites (~9.7 nm) with large surface energy leading to the stabilization of metastable orthorhombic phase. Unlike atomic layer deposition (ALD) of HZO, PLD is more advantageous for depositing highly crystalline thin films through optimized parameters, such as laser fluence and background gas pressure. Further, the PLD-HZO is integrated with HfO2 dielectric and the resulting gate stacks have been used in the bottom gate FET architecture-‘Si//PLD-HZO/HfO2/MoS2//Ti/Au’. The NCFETs have yielded a sub-thermionic subthreshold swing (SS for = 33.03 ± 8.7 mV/dec. and SS rev = 36.4 ± 7.7 mV/dec.) and a negligible hysteresis (~28 mV), which is capable in realizing low power integrated digital/analog circuits.Hae Won ChoPavan PujarMinsu ChoiSeunghun KangSeongin HongJunwoo ParkSeungho BaekYunseok KimJaichan LeeSunkook KimNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ChemistryQD1-999ENnpj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999 Hae Won Cho Pavan Pujar Minsu Choi Seunghun Kang Seongin Hong Junwoo Park Seungho Baek Yunseok Kim Jaichan Lee Sunkook Kim Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors
description	Abstract Herein, the direct growth of polar orthorhombic phase in Hf0.5Zr0.5O2 (HZO) thin films is reported using Pulsed Laser Deposition (PLD). The growth of HZO onto a preheated (700 °C) silicon substrate mimics the rapid thermal annealing, which allows the formation of smaller crystallites (~9.7 nm) with large surface energy leading to the stabilization of metastable orthorhombic phase. Unlike atomic layer deposition (ALD) of HZO, PLD is more advantageous for depositing highly crystalline thin films through optimized parameters, such as laser fluence and background gas pressure. Further, the PLD-HZO is integrated with HfO2 dielectric and the resulting gate stacks have been used in the bottom gate FET architecture-‘Si//PLD-HZO/HfO2/MoS2//Ti/Au’. The NCFETs have yielded a sub-thermionic subthreshold swing (SS for = 33.03 ± 8.7 mV/dec. and SS rev = 36.4 ± 7.7 mV/dec.) and a negligible hysteresis (~28 mV), which is capable in realizing low power integrated digital/analog circuits.
format	article
author	Hae Won Cho Pavan Pujar Minsu Choi Seunghun Kang Seongin Hong Junwoo Park Seungho Baek Yunseok Kim Jaichan Lee Sunkook Kim
author_facet	Hae Won Cho Pavan Pujar Minsu Choi Seunghun Kang Seongin Hong Junwoo Park Seungho Baek Yunseok Kim Jaichan Lee Sunkook Kim
author_sort	Hae Won Cho
title	Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors
title_short	Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors
title_full	Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors
title_fullStr	Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors
title_full_unstemmed	Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors
title_sort	direct growth of orthorhombic hf0.5zr0.5o2 thin films for hysteresis-free mos2 negative capacitance field-effect transistors
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/c67e4fae408a46fabc5bd9f59b7d58c4
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Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors

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