Broadband tunable integrated CMOS pulser with 80-ps minimum pulse width for gain-switched semiconductor lasers

Abstract High power pulsed lasers with tunable pulse widths are highly favored in many applications. When combined with power amplification, gain-switched semiconductor lasers driven by broadband tunable electric pulsers can meet such requirements. For this reason, we designed and produced a low-cos...

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Autores principales:	Shaoqiang Chen, Shengxi Diao, Pengtao Li, Takahiro Nakamura, Masahiro Yoshita, Guoen Weng, Xiaobo Hu, Yanling Shi, Yiqing Liu, Hidefumi Akiyama
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/c7001d7e10784b849d89cd237c3bb413
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spelling	oai:doaj.org-article:c7001d7e10784b849d89cd237c3bb4132021-12-02T12:32:42ZBroadband tunable integrated CMOS pulser with 80-ps minimum pulse width for gain-switched semiconductor lasers10.1038/s41598-017-07138-32045-2322https://doaj.org/article/c7001d7e10784b849d89cd237c3bb4132017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-07138-3https://doaj.org/toc/2045-2322Abstract High power pulsed lasers with tunable pulse widths are highly favored in many applications. When combined with power amplification, gain-switched semiconductor lasers driven by broadband tunable electric pulsers can meet such requirements. For this reason, we designed and produced a low-cost integrated CMOS pulse generator with a minimum pulse width of 80 ps and a wide tuning range of up to 270 ns using a 40-nm microelectronic process technique. We used this pulser to drive a 1.3-µm semiconductor laser diode directly, and thereafter investigated the gain-switching properties of the laser system. The optical pulses consist of a spike followed by a steady state region. Tuning the width of the electrical pulse down to approximately 1.5 ns produces optical pulses consisting only of the spike, which has a minimum pulse-width of 100 ps. Moreover, the duration of the steady state can be tuned continuously by tuning the electrical pulse width, with a peak power of approximately 5 mW. The output voltage of the electric pulser has a tuning range of 0.8–1.5 V that can be used to directly drive semiconductor laser diodes with wavelengths in the near-infrared spectrum, which are suitable for power amplification with rare-earth doped fiber amplifiers.Shaoqiang ChenShengxi DiaoPengtao LiTakahiro NakamuraMasahiro YoshitaGuoen WengXiaobo HuYanling ShiYiqing LiuHidefumi AkiyamaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Shaoqiang Chen Shengxi Diao Pengtao Li Takahiro Nakamura Masahiro Yoshita Guoen Weng Xiaobo Hu Yanling Shi Yiqing Liu Hidefumi Akiyama Broadband tunable integrated CMOS pulser with 80-ps minimum pulse width for gain-switched semiconductor lasers
description	Abstract High power pulsed lasers with tunable pulse widths are highly favored in many applications. When combined with power amplification, gain-switched semiconductor lasers driven by broadband tunable electric pulsers can meet such requirements. For this reason, we designed and produced a low-cost integrated CMOS pulse generator with a minimum pulse width of 80 ps and a wide tuning range of up to 270 ns using a 40-nm microelectronic process technique. We used this pulser to drive a 1.3-µm semiconductor laser diode directly, and thereafter investigated the gain-switching properties of the laser system. The optical pulses consist of a spike followed by a steady state region. Tuning the width of the electrical pulse down to approximately 1.5 ns produces optical pulses consisting only of the spike, which has a minimum pulse-width of 100 ps. Moreover, the duration of the steady state can be tuned continuously by tuning the electrical pulse width, with a peak power of approximately 5 mW. The output voltage of the electric pulser has a tuning range of 0.8–1.5 V that can be used to directly drive semiconductor laser diodes with wavelengths in the near-infrared spectrum, which are suitable for power amplification with rare-earth doped fiber amplifiers.
format	article
author	Shaoqiang Chen Shengxi Diao Pengtao Li Takahiro Nakamura Masahiro Yoshita Guoen Weng Xiaobo Hu Yanling Shi Yiqing Liu Hidefumi Akiyama
author_facet	Shaoqiang Chen Shengxi Diao Pengtao Li Takahiro Nakamura Masahiro Yoshita Guoen Weng Xiaobo Hu Yanling Shi Yiqing Liu Hidefumi Akiyama
author_sort	Shaoqiang Chen
title	Broadband tunable integrated CMOS pulser with 80-ps minimum pulse width for gain-switched semiconductor lasers
title_short	Broadband tunable integrated CMOS pulser with 80-ps minimum pulse width for gain-switched semiconductor lasers
title_full	Broadband tunable integrated CMOS pulser with 80-ps minimum pulse width for gain-switched semiconductor lasers
title_fullStr	Broadband tunable integrated CMOS pulser with 80-ps minimum pulse width for gain-switched semiconductor lasers
title_full_unstemmed	Broadband tunable integrated CMOS pulser with 80-ps minimum pulse width for gain-switched semiconductor lasers
title_sort	broadband tunable integrated cmos pulser with 80-ps minimum pulse width for gain-switched semiconductor lasers
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/c7001d7e10784b849d89cd237c3bb413
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Broadband tunable integrated CMOS pulser with 80-ps minimum pulse width for gain-switched semiconductor lasers

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