Phenomenological Model for Defect Interactions in Irradiated Functional Materials

Abstract The ability to tailor the performance of functional materials, such as semiconductors, via careful manipulation of defects has led to extraordinary advances in microelectronics. Functional metal oxides are no exception – protonic-defect-conducting oxides find use in solid oxide fuel cells (...

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Autores principales: Steven J. Brewer, Cory D. Cress, Samuel C. Williams, Hanhan Zhou, Manuel Rivas, Ryan Q. Rudy, Ronald G. Polcawich, Evan R. Glaser, Jacob L. Jones, Nazanin Bassiri-Gharb
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Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/c70e194247cd46a5a910eddb32ca26b4
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spelling oai:doaj.org-article:c70e194247cd46a5a910eddb32ca26b42021-12-02T16:07:56ZPhenomenological Model for Defect Interactions in Irradiated Functional Materials10.1038/s41598-017-05071-z2045-2322https://doaj.org/article/c70e194247cd46a5a910eddb32ca26b42017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-05071-zhttps://doaj.org/toc/2045-2322Abstract The ability to tailor the performance of functional materials, such as semiconductors, via careful manipulation of defects has led to extraordinary advances in microelectronics. Functional metal oxides are no exception – protonic-defect-conducting oxides find use in solid oxide fuel cells (SOFCs) and oxygen-deficient high-temperature superconductors are poised for power transmission and magnetic imaging applications. Similarly, the advantageous functional responses in ferroelectric materials that make them attractive for use in microelectromechanical systems (MEMS), logic elements, and environmental energy harvesting, are derived from interactions of defects with other defects (such as domain walls) and with the lattice. Chemical doping has traditionally been employed to study the effects of defects in functional materials, but complications arising from compositional heterogeneity often make interpretation of results difficult. Alternatively, irradiation is a versatile means of evaluating defect interactions while avoiding the complexities of doping. Here, a generalized phenomenological model is developed to quantify defect interactions and compare material performance in functional oxides as a function of radiation dose. The model is demonstrated with historical data from literature on ferroelectrics, and expanded to functional materials for SOFCs, mixed ionic-electronic conductors (MIECs), He-ion implantation, and superconductors. Experimental data is used to study microstructural effects on defect interactions in ferroelectrics.Steven J. BrewerCory D. CressSamuel C. WilliamsHanhan ZhouManuel RivasRyan Q. RudyRonald G. PolcawichEvan R. GlaserJacob L. JonesNazanin Bassiri-GharbNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Steven J. Brewer
Cory D. Cress
Samuel C. Williams
Hanhan Zhou
Manuel Rivas
Ryan Q. Rudy
Ronald G. Polcawich
Evan R. Glaser
Jacob L. Jones
Nazanin Bassiri-Gharb
Phenomenological Model for Defect Interactions in Irradiated Functional Materials
description Abstract The ability to tailor the performance of functional materials, such as semiconductors, via careful manipulation of defects has led to extraordinary advances in microelectronics. Functional metal oxides are no exception – protonic-defect-conducting oxides find use in solid oxide fuel cells (SOFCs) and oxygen-deficient high-temperature superconductors are poised for power transmission and magnetic imaging applications. Similarly, the advantageous functional responses in ferroelectric materials that make them attractive for use in microelectromechanical systems (MEMS), logic elements, and environmental energy harvesting, are derived from interactions of defects with other defects (such as domain walls) and with the lattice. Chemical doping has traditionally been employed to study the effects of defects in functional materials, but complications arising from compositional heterogeneity often make interpretation of results difficult. Alternatively, irradiation is a versatile means of evaluating defect interactions while avoiding the complexities of doping. Here, a generalized phenomenological model is developed to quantify defect interactions and compare material performance in functional oxides as a function of radiation dose. The model is demonstrated with historical data from literature on ferroelectrics, and expanded to functional materials for SOFCs, mixed ionic-electronic conductors (MIECs), He-ion implantation, and superconductors. Experimental data is used to study microstructural effects on defect interactions in ferroelectrics.
format article
author Steven J. Brewer
Cory D. Cress
Samuel C. Williams
Hanhan Zhou
Manuel Rivas
Ryan Q. Rudy
Ronald G. Polcawich
Evan R. Glaser
Jacob L. Jones
Nazanin Bassiri-Gharb
author_facet Steven J. Brewer
Cory D. Cress
Samuel C. Williams
Hanhan Zhou
Manuel Rivas
Ryan Q. Rudy
Ronald G. Polcawich
Evan R. Glaser
Jacob L. Jones
Nazanin Bassiri-Gharb
author_sort Steven J. Brewer
title Phenomenological Model for Defect Interactions in Irradiated Functional Materials
title_short Phenomenological Model for Defect Interactions in Irradiated Functional Materials
title_full Phenomenological Model for Defect Interactions in Irradiated Functional Materials
title_fullStr Phenomenological Model for Defect Interactions in Irradiated Functional Materials
title_full_unstemmed Phenomenological Model for Defect Interactions in Irradiated Functional Materials
title_sort phenomenological model for defect interactions in irradiated functional materials
publisher Nature Portfolio
publishDate 2017
url https://doaj.org/article/c70e194247cd46a5a910eddb32ca26b4
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