Thermo-Optical Mechanical Waves in a Rotating Solid Semiconductor Sphere Using the Improved Green–Naghdi III Model

The current study investigates thermophotovoltaic interactions using a new mathematical model of thermoelasticity established on a modification of the Green–Naghdi model of type III (GN-III). The basic equations, in which the heat transfer is in the form of the Moore–Gibson–Thompson (MGT) equation,...

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Autores principales:	Ahmed E. Abouelregal, Marin Marin, Sameh Askar
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	thermophotovoltaic semiconductors GN-III model carrier lifetime rotation Mathematics QA1-939
Acceso en línea:	https://doaj.org/article/c71814e02a7444dbbdaed82e89941f16
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id	oai:doaj.org-article:c71814e02a7444dbbdaed82e89941f16
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spelling	oai:doaj.org-article:c71814e02a7444dbbdaed82e89941f162021-11-25T18:17:02ZThermo-Optical Mechanical Waves in a Rotating Solid Semiconductor Sphere Using the Improved Green–Naghdi III Model10.3390/math92229022227-7390https://doaj.org/article/c71814e02a7444dbbdaed82e89941f162021-11-01T00:00:00Zhttps://www.mdpi.com/2227-7390/9/22/2902https://doaj.org/toc/2227-7390The current study investigates thermophotovoltaic interactions using a new mathematical model of thermoelasticity established on a modification of the Green–Naghdi model of type III (GN-III). The basic equations, in which the heat transfer is in the form of the Moore–Gibson–Thompson (MGT) equation, are derived by adding a single delay factor to the GN-III model. The impact of temperature and electrical elastic displacement of semiconductors throughout the excited thermoelectric mechanism can be studied theoretically using this model. The proposed model was used to investigate the interactions between the processes of thermoelastic plasma in a rotating semiconductor solid sphere that was subjected to a thermal shock and crossed to an externally applied magnetic field. The influence of rotation parameters on various photothermal characteristics of silicon solid was presented and explored using the Laplace technique.Ahmed E. AbouelregalMarin MarinSameh AskarMDPI AGarticlethermophotovoltaicsemiconductorsGN-III modelcarrier lifetimerotationMathematicsQA1-939ENMathematics, Vol 9, Iss 2902, p 2902 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	thermophotovoltaic semiconductors GN-III model carrier lifetime rotation Mathematics QA1-939
spellingShingle	thermophotovoltaic semiconductors GN-III model carrier lifetime rotation Mathematics QA1-939 Ahmed E. Abouelregal Marin Marin Sameh Askar Thermo-Optical Mechanical Waves in a Rotating Solid Semiconductor Sphere Using the Improved Green–Naghdi III Model
description	The current study investigates thermophotovoltaic interactions using a new mathematical model of thermoelasticity established on a modification of the Green–Naghdi model of type III (GN-III). The basic equations, in which the heat transfer is in the form of the Moore–Gibson–Thompson (MGT) equation, are derived by adding a single delay factor to the GN-III model. The impact of temperature and electrical elastic displacement of semiconductors throughout the excited thermoelectric mechanism can be studied theoretically using this model. The proposed model was used to investigate the interactions between the processes of thermoelastic plasma in a rotating semiconductor solid sphere that was subjected to a thermal shock and crossed to an externally applied magnetic field. The influence of rotation parameters on various photothermal characteristics of silicon solid was presented and explored using the Laplace technique.
format	article
author	Ahmed E. Abouelregal Marin Marin Sameh Askar
author_facet	Ahmed E. Abouelregal Marin Marin Sameh Askar
author_sort	Ahmed E. Abouelregal
title	Thermo-Optical Mechanical Waves in a Rotating Solid Semiconductor Sphere Using the Improved Green–Naghdi III Model
title_short	Thermo-Optical Mechanical Waves in a Rotating Solid Semiconductor Sphere Using the Improved Green–Naghdi III Model
title_full	Thermo-Optical Mechanical Waves in a Rotating Solid Semiconductor Sphere Using the Improved Green–Naghdi III Model
title_fullStr	Thermo-Optical Mechanical Waves in a Rotating Solid Semiconductor Sphere Using the Improved Green–Naghdi III Model
title_full_unstemmed	Thermo-Optical Mechanical Waves in a Rotating Solid Semiconductor Sphere Using the Improved Green–Naghdi III Model
title_sort	thermo-optical mechanical waves in a rotating solid semiconductor sphere using the improved green–naghdi iii model
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/c71814e02a7444dbbdaed82e89941f16
work_keys_str_mv	AT ahmedeabouelregal thermoopticalmechanicalwavesinarotatingsolidsemiconductorsphereusingtheimprovedgreennaghdiiiimodel AT marinmarin thermoopticalmechanicalwavesinarotatingsolidsemiconductorsphereusingtheimprovedgreennaghdiiiimodel AT samehaskar thermoopticalmechanicalwavesinarotatingsolidsemiconductorsphereusingtheimprovedgreennaghdiiiimodel
_version_	1718411404916031488

Thermo-Optical Mechanical Waves in a Rotating Solid Semiconductor Sphere Using the Improved Green–Naghdi III Model

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