Heterogeneously integrated ITO plasmonic Mach–Zehnder interferometric modulator on SOI

Abstract Densely integrated active photonics is key for next generation on-chip networks for addressing both footprint and energy budget concerns. However, the weak light-matter interaction in traditional active Silicon optoelectronics mandates rather sizable device lengths. The ideal active materia...

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Autores principales:	Rubab Amin, Rishi Maiti, Yaliang Gui, Can Suer, Mario Miscuglio, Elham Heidari, Jacob B. Khurgin, Ray T. Chen, Hamed Dalir, Volker J. Sorger
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/c7fccc69574b4a3089790aae65eaee30
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spelling	oai:doaj.org-article:c7fccc69574b4a3089790aae65eaee302021-12-02T14:01:35ZHeterogeneously integrated ITO plasmonic Mach–Zehnder interferometric modulator on SOI10.1038/s41598-020-80381-32045-2322https://doaj.org/article/c7fccc69574b4a3089790aae65eaee302021-01-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-80381-3https://doaj.org/toc/2045-2322Abstract Densely integrated active photonics is key for next generation on-chip networks for addressing both footprint and energy budget concerns. However, the weak light-matter interaction in traditional active Silicon optoelectronics mandates rather sizable device lengths. The ideal active material choice should avail high index modulation while being easily integrated into Silicon photonics platforms. Indium tin oxide (ITO) offers such functionalities and has shown promising modulation capacity recently. Interestingly, the nanometer-thin unity-strong index modulation of ITO synergistically combines the high group-index in hybrid plasmonic with nanoscale optical modes. Following this design paradigm, here, we demonstrate a spectrally broadband, GHz-fast Mach–Zehnder interferometric modulator, exhibiting a high efficiency signified by a miniscule VπL of 95 V μm, deploying a one-micrometer compact electrostatically tunable plasmonic phase-shifter, based on heterogeneously integrated ITO thin films into silicon photonics. Furthermore we show, that this device paradigm enables spectrally broadband operation across the entire telecommunication near infrared C-band. Such sub-wavelength short efficient and fast modulators monolithically integrated into Silicon platform open up new possibilities for high-density photonic circuitry, which is critical for high interconnect density of photonic neural networks or applications in GHz-fast optical phased-arrays, for example.Rubab AminRishi MaitiYaliang GuiCan SuerMario MiscuglioElham HeidariJacob B. KhurginRay T. ChenHamed DalirVolker J. SorgerNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-12 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Rubab Amin Rishi Maiti Yaliang Gui Can Suer Mario Miscuglio Elham Heidari Jacob B. Khurgin Ray T. Chen Hamed Dalir Volker J. Sorger Heterogeneously integrated ITO plasmonic Mach–Zehnder interferometric modulator on SOI
description	Abstract Densely integrated active photonics is key for next generation on-chip networks for addressing both footprint and energy budget concerns. However, the weak light-matter interaction in traditional active Silicon optoelectronics mandates rather sizable device lengths. The ideal active material choice should avail high index modulation while being easily integrated into Silicon photonics platforms. Indium tin oxide (ITO) offers such functionalities and has shown promising modulation capacity recently. Interestingly, the nanometer-thin unity-strong index modulation of ITO synergistically combines the high group-index in hybrid plasmonic with nanoscale optical modes. Following this design paradigm, here, we demonstrate a spectrally broadband, GHz-fast Mach–Zehnder interferometric modulator, exhibiting a high efficiency signified by a miniscule VπL of 95 V μm, deploying a one-micrometer compact electrostatically tunable plasmonic phase-shifter, based on heterogeneously integrated ITO thin films into silicon photonics. Furthermore we show, that this device paradigm enables spectrally broadband operation across the entire telecommunication near infrared C-band. Such sub-wavelength short efficient and fast modulators monolithically integrated into Silicon platform open up new possibilities for high-density photonic circuitry, which is critical for high interconnect density of photonic neural networks or applications in GHz-fast optical phased-arrays, for example.
format	article
author	Rubab Amin Rishi Maiti Yaliang Gui Can Suer Mario Miscuglio Elham Heidari Jacob B. Khurgin Ray T. Chen Hamed Dalir Volker J. Sorger
author_facet	Rubab Amin Rishi Maiti Yaliang Gui Can Suer Mario Miscuglio Elham Heidari Jacob B. Khurgin Ray T. Chen Hamed Dalir Volker J. Sorger
author_sort	Rubab Amin
title	Heterogeneously integrated ITO plasmonic Mach–Zehnder interferometric modulator on SOI
title_short	Heterogeneously integrated ITO plasmonic Mach–Zehnder interferometric modulator on SOI
title_full	Heterogeneously integrated ITO plasmonic Mach–Zehnder interferometric modulator on SOI
title_fullStr	Heterogeneously integrated ITO plasmonic Mach–Zehnder interferometric modulator on SOI
title_full_unstemmed	Heterogeneously integrated ITO plasmonic Mach–Zehnder interferometric modulator on SOI
title_sort	heterogeneously integrated ito plasmonic mach–zehnder interferometric modulator on soi
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/c7fccc69574b4a3089790aae65eaee30
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Heterogeneously integrated ITO plasmonic Mach–Zehnder interferometric modulator on SOI

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