Evolution of the electronic band structure of twisted bilayer graphene upon doping
Abstract The electronic band structure of twisted bilayer graphene develops van Hove singularities whose energy depends on the twist angle between the two layers. Using Raman spectroscopy, we monitor the evolution of the electronic band structure upon doping using the G peak area which is enhanced w...
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Nature Portfolio
2017
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oai:doaj.org-article:c90559c9f6f3462ab60206ae436f80612021-12-02T11:52:40ZEvolution of the electronic band structure of twisted bilayer graphene upon doping10.1038/s41598-017-07580-32045-2322https://doaj.org/article/c90559c9f6f3462ab60206ae436f80612017-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-07580-3https://doaj.org/toc/2045-2322Abstract The electronic band structure of twisted bilayer graphene develops van Hove singularities whose energy depends on the twist angle between the two layers. Using Raman spectroscopy, we monitor the evolution of the electronic band structure upon doping using the G peak area which is enhanced when the laser photon energy is resonant with the energy separation of the van Hove singularities. Upon charge doping, the Raman G peak area initially increases for twist angles larger than a critical angle and decreases for smaller angles. To explain this behavior with twist angle, the energy separation of the van Hove singularities must decrease with increasing charge density demonstrating the ability to modify the electronic and optical properties of twisted bilayer graphene with doping.Shengqiang HuangMatthew YankowitzKanokporn ChattrakunArvinder SandhuBrian J. LeRoyNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017) |
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Medicine R Science Q Shengqiang Huang Matthew Yankowitz Kanokporn Chattrakun Arvinder Sandhu Brian J. LeRoy Evolution of the electronic band structure of twisted bilayer graphene upon doping |
description |
Abstract The electronic band structure of twisted bilayer graphene develops van Hove singularities whose energy depends on the twist angle between the two layers. Using Raman spectroscopy, we monitor the evolution of the electronic band structure upon doping using the G peak area which is enhanced when the laser photon energy is resonant with the energy separation of the van Hove singularities. Upon charge doping, the Raman G peak area initially increases for twist angles larger than a critical angle and decreases for smaller angles. To explain this behavior with twist angle, the energy separation of the van Hove singularities must decrease with increasing charge density demonstrating the ability to modify the electronic and optical properties of twisted bilayer graphene with doping. |
format |
article |
author |
Shengqiang Huang Matthew Yankowitz Kanokporn Chattrakun Arvinder Sandhu Brian J. LeRoy |
author_facet |
Shengqiang Huang Matthew Yankowitz Kanokporn Chattrakun Arvinder Sandhu Brian J. LeRoy |
author_sort |
Shengqiang Huang |
title |
Evolution of the electronic band structure of twisted bilayer graphene upon doping |
title_short |
Evolution of the electronic band structure of twisted bilayer graphene upon doping |
title_full |
Evolution of the electronic band structure of twisted bilayer graphene upon doping |
title_fullStr |
Evolution of the electronic band structure of twisted bilayer graphene upon doping |
title_full_unstemmed |
Evolution of the electronic band structure of twisted bilayer graphene upon doping |
title_sort |
evolution of the electronic band structure of twisted bilayer graphene upon doping |
publisher |
Nature Portfolio |
publishDate |
2017 |
url |
https://doaj.org/article/c90559c9f6f3462ab60206ae436f8061 |
work_keys_str_mv |
AT shengqianghuang evolutionoftheelectronicbandstructureoftwistedbilayergrapheneupondoping AT matthewyankowitz evolutionoftheelectronicbandstructureoftwistedbilayergrapheneupondoping AT kanokpornchattrakun evolutionoftheelectronicbandstructureoftwistedbilayergrapheneupondoping AT arvindersandhu evolutionoftheelectronicbandstructureoftwistedbilayergrapheneupondoping AT brianjleroy evolutionoftheelectronicbandstructureoftwistedbilayergrapheneupondoping |
_version_ |
1718395010820341760 |