Asymmetric bias-induced barrier lowering as an alternative origin of current rectification in geometric diodes
Current rectification in the THz regime using geometric diodes has been explained previously by exotic transport properties. Here, an alternative mechanism based on asymmetric bias-induced barrier lowering is presented.
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| Autores principales: | , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/c91871e97267420a927ce013e61c44af |
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