A Low-Energy High-Density Capacitor-Less I&F Neuron Circuit Using Feedback FET Co-Integrated With CMOS
We have developed a capacitor-less I&F neuron circuit with a dual gate positive feedback fieldeffect transistor (FBFET) and successfully co-integrated FBFET and CMOS in a wafer. By implementing the neuron circuit with FBFET, we can overcome the limits of conventional CMOS, reduce energy c...
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| Autores principales: | , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2019
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/c95f424d327b4298b1995b386268ccee |
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| Sumario: | We have developed a capacitor-less I&F neuron circuit with a dual gate positive feedback fieldeffect transistor (FBFET) and successfully co-integrated FBFET and CMOS in a wafer. By implementing the neuron circuit with FBFET, we can overcome the limits of conventional CMOS, reduce energy consumption, and imitate the biological neuron. The floating body of the FBFET can replace the membrane capacitor that occupies a large area and performs leaky integration of the neuron. Due to the extremely low sub-threshold swing of the FBFET (less than 0.528mv/dc), energy consumption of the neuron is significantly reduced by suppressing sub-threshold current. Finally, we analyzed the fabricated neuron circuit operation, retention time of the integrated charges and energy consumption compare to conventional CMOS neuron circuit. |
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