A Low-Energy High-Density Capacitor-Less I&F Neuron Circuit Using Feedback FET Co-Integrated With CMOS

We have developed a capacitor-less I&F neuron circuit with a dual gate positive feedback fieldeffect transistor (FBFET) and successfully co-integrated FBFET and CMOS in a wafer. By implementing the neuron circuit with FBFET, we can overcome the limits of conventional CMOS, reduce energy c...

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Autores principales: Min-Woo Kwon, Kyungchul Park, Myung-Hyun Baek, Junil Lee, Byung-Gook Park
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Lenguaje:EN
Publicado: IEEE 2019
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Acceso en línea:https://doaj.org/article/c95f424d327b4298b1995b386268ccee
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spelling oai:doaj.org-article:c95f424d327b4298b1995b386268ccee2021-11-19T00:01:14ZA Low-Energy High-Density Capacitor-Less I&F Neuron Circuit Using Feedback FET Co-Integrated With CMOS2168-673410.1109/JEDS.2019.2941917https://doaj.org/article/c95f424d327b4298b1995b386268ccee2019-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/8840896/https://doaj.org/toc/2168-6734We have developed a capacitor-less I&F neuron circuit with a dual gate positive feedback fieldeffect transistor (FBFET) and successfully co-integrated FBFET and CMOS in a wafer. By implementing the neuron circuit with FBFET, we can overcome the limits of conventional CMOS, reduce energy consumption, and imitate the biological neuron. The floating body of the FBFET can replace the membrane capacitor that occupies a large area and performs leaky integration of the neuron. Due to the extremely low sub-threshold swing of the FBFET (less than 0.528mv/dc), energy consumption of the neuron is significantly reduced by suppressing sub-threshold current. Finally, we analyzed the fabricated neuron circuit operation, retention time of the integrated charges and energy consumption compare to conventional CMOS neuron circuit.Min-Woo KwonKyungchul ParkMyung-Hyun BaekJunil LeeByung-Gook ParkIEEEarticleIntegrate-and-fire neuron circuitpositive feedback FETlow energy consumptionfloating body effectElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 7, Pp 1080-1084 (2019)
institution DOAJ
collection DOAJ
language EN
topic Integrate-and-fire neuron circuit
positive feedback FET
low energy consumption
floating body effect
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
spellingShingle Integrate-and-fire neuron circuit
positive feedback FET
low energy consumption
floating body effect
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Min-Woo Kwon
Kyungchul Park
Myung-Hyun Baek
Junil Lee
Byung-Gook Park
A Low-Energy High-Density Capacitor-Less I&F Neuron Circuit Using Feedback FET Co-Integrated With CMOS
description We have developed a capacitor-less I&F neuron circuit with a dual gate positive feedback fieldeffect transistor (FBFET) and successfully co-integrated FBFET and CMOS in a wafer. By implementing the neuron circuit with FBFET, we can overcome the limits of conventional CMOS, reduce energy consumption, and imitate the biological neuron. The floating body of the FBFET can replace the membrane capacitor that occupies a large area and performs leaky integration of the neuron. Due to the extremely low sub-threshold swing of the FBFET (less than 0.528mv/dc), energy consumption of the neuron is significantly reduced by suppressing sub-threshold current. Finally, we analyzed the fabricated neuron circuit operation, retention time of the integrated charges and energy consumption compare to conventional CMOS neuron circuit.
format article
author Min-Woo Kwon
Kyungchul Park
Myung-Hyun Baek
Junil Lee
Byung-Gook Park
author_facet Min-Woo Kwon
Kyungchul Park
Myung-Hyun Baek
Junil Lee
Byung-Gook Park
author_sort Min-Woo Kwon
title A Low-Energy High-Density Capacitor-Less I&F Neuron Circuit Using Feedback FET Co-Integrated With CMOS
title_short A Low-Energy High-Density Capacitor-Less I&F Neuron Circuit Using Feedback FET Co-Integrated With CMOS
title_full A Low-Energy High-Density Capacitor-Less I&F Neuron Circuit Using Feedback FET Co-Integrated With CMOS
title_fullStr A Low-Energy High-Density Capacitor-Less I&F Neuron Circuit Using Feedback FET Co-Integrated With CMOS
title_full_unstemmed A Low-Energy High-Density Capacitor-Less I&F Neuron Circuit Using Feedback FET Co-Integrated With CMOS
title_sort low-energy high-density capacitor-less i&f neuron circuit using feedback fet co-integrated with cmos
publisher IEEE
publishDate 2019
url https://doaj.org/article/c95f424d327b4298b1995b386268ccee
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