Selective phase growth and precise-layer control in MoTe2

Selective phase growth and precise-layer control in MoTe2

The polymorphism of MoTe2 can be used to realize planar metallic/semiconducting homojunctions in 2D devices, greatly reducing the contact resistance. Here, the simultaneous growth of both phases is achieved on the same substrate by single-step chemical vapor deposition and seeding layer engineering.

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Detalles Bibliográficos
Autores principales: James P. Fraser, Liudvika Masaityte, Jingyi Zhang, Stacey Laing, Juan Carlos Moreno-López, Adam F. McKenzie, Jessica C. McGlynn, Vishal Panchal, Duncan Graham, Olga Kazakova, Thomas Pichler, Donald A. MacLaren, David A. J. Moran, Alexey Y. Ganin
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2020
Materias:
Materials of engineering and construction. Mechanics of materials
TA401-492
Acceso en línea:https://doaj.org/article/c974631d39364eaaac5f9c811e2a0d41
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Descripción
Sumario:The polymorphism of MoTe2 can be used to realize planar metallic/semiconducting homojunctions in 2D devices, greatly reducing the contact resistance. Here, the simultaneous growth of both phases is achieved on the same substrate by single-step chemical vapor deposition and seeding layer engineering.

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