Selective phase growth and precise-layer control in MoTe2

The polymorphism of MoTe2 can be used to realize planar metallic/semiconducting homojunctions in 2D devices, greatly reducing the contact resistance. Here, the simultaneous growth of both phases is achieved on the same substrate by single-step chemical vapor deposition and seeding layer engineering.

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Autores principales:	James P. Fraser, Liudvika Masaityte, Jingyi Zhang, Stacey Laing, Juan Carlos Moreno-López, Adam F. McKenzie, Jessica C. McGlynn, Vishal Panchal, Duncan Graham, Olga Kazakova, Thomas Pichler, Donald A. MacLaren, David A. J. Moran, Alexey Y. Ganin
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492
Acceso en línea:	https://doaj.org/article/c974631d39364eaaac5f9c811e2a0d41
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spelling	oai:doaj.org-article:c974631d39364eaaac5f9c811e2a0d412021-12-02T16:26:29ZSelective phase growth and precise-layer control in MoTe210.1038/s43246-020-00048-42662-4443https://doaj.org/article/c974631d39364eaaac5f9c811e2a0d412020-07-01T00:00:00Zhttps://doi.org/10.1038/s43246-020-00048-4https://doaj.org/toc/2662-4443The polymorphism of MoTe2 can be used to realize planar metallic/semiconducting homojunctions in 2D devices, greatly reducing the contact resistance. Here, the simultaneous growth of both phases is achieved on the same substrate by single-step chemical vapor deposition and seeding layer engineering.James P. FraserLiudvika MasaityteJingyi ZhangStacey LaingJuan Carlos Moreno-LópezAdam F. McKenzieJessica C. McGlynnVishal PanchalDuncan GrahamOlga KazakovaThomas PichlerDonald A. MacLarenDavid A. J. MoranAlexey Y. GaninNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ENCommunications Materials, Vol 1, Iss 1, Pp 1-9 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 James P. Fraser Liudvika Masaityte Jingyi Zhang Stacey Laing Juan Carlos Moreno-López Adam F. McKenzie Jessica C. McGlynn Vishal Panchal Duncan Graham Olga Kazakova Thomas Pichler Donald A. MacLaren David A. J. Moran Alexey Y. Ganin Selective phase growth and precise-layer control in MoTe2
description	The polymorphism of MoTe2 can be used to realize planar metallic/semiconducting homojunctions in 2D devices, greatly reducing the contact resistance. Here, the simultaneous growth of both phases is achieved on the same substrate by single-step chemical vapor deposition and seeding layer engineering.
format	article
author	James P. Fraser Liudvika Masaityte Jingyi Zhang Stacey Laing Juan Carlos Moreno-López Adam F. McKenzie Jessica C. McGlynn Vishal Panchal Duncan Graham Olga Kazakova Thomas Pichler Donald A. MacLaren David A. J. Moran Alexey Y. Ganin
author_facet	James P. Fraser Liudvika Masaityte Jingyi Zhang Stacey Laing Juan Carlos Moreno-López Adam F. McKenzie Jessica C. McGlynn Vishal Panchal Duncan Graham Olga Kazakova Thomas Pichler Donald A. MacLaren David A. J. Moran Alexey Y. Ganin
author_sort	James P. Fraser
title	Selective phase growth and precise-layer control in MoTe2
title_short	Selective phase growth and precise-layer control in MoTe2
title_full	Selective phase growth and precise-layer control in MoTe2
title_fullStr	Selective phase growth and precise-layer control in MoTe2
title_full_unstemmed	Selective phase growth and precise-layer control in MoTe2
title_sort	selective phase growth and precise-layer control in mote2
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/c974631d39364eaaac5f9c811e2a0d41
work_keys_str_mv	AT jamespfraser selectivephasegrowthandpreciselayercontrolinmote2 AT liudvikamasaityte selectivephasegrowthandpreciselayercontrolinmote2 AT jingyizhang selectivephasegrowthandpreciselayercontrolinmote2 AT staceylaing selectivephasegrowthandpreciselayercontrolinmote2 AT juancarlosmorenolopez selectivephasegrowthandpreciselayercontrolinmote2 AT adamfmckenzie selectivephasegrowthandpreciselayercontrolinmote2 AT jessicacmcglynn selectivephasegrowthandpreciselayercontrolinmote2 AT vishalpanchal selectivephasegrowthandpreciselayercontrolinmote2 AT duncangraham selectivephasegrowthandpreciselayercontrolinmote2 AT olgakazakova selectivephasegrowthandpreciselayercontrolinmote2 AT thomaspichler selectivephasegrowthandpreciselayercontrolinmote2 AT donaldamaclaren selectivephasegrowthandpreciselayercontrolinmote2 AT davidajmoran selectivephasegrowthandpreciselayercontrolinmote2 AT alexeyyganin selectivephasegrowthandpreciselayercontrolinmote2
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Selective phase growth and precise-layer control in MoTe2

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