Selective phase growth and precise-layer control in MoTe2
The polymorphism of MoTe2 can be used to realize planar metallic/semiconducting homojunctions in 2D devices, greatly reducing the contact resistance. Here, the simultaneous growth of both phases is achieved on the same substrate by single-step chemical vapor deposition and seeding layer engineering.
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| Autores principales: | , , , , , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2020
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/c974631d39364eaaac5f9c811e2a0d41 |
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