Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions

Here, a defect healing method is used to tune the height and width of the Schottky barrier at the interface between 2D metals and 2D semiconductors, leading to the realization of van der Waals rectifiers with enhanced performance.

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Autores principales:	Xiankun Zhang, Baishan Liu, Li Gao, Huihui Yu, Xiaozhi Liu, Junli Du, Jiankun Xiao, Yihe Liu, Lin Gu, Qingliang Liao, Zhuo Kang, Zheng Zhang, Yue Zhang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/c9a0fea19d904002a20ade4e1b3424d2
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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spelling	oai:doaj.org-article:c9a0fea19d904002a20ade4e1b3424d22021-12-02T13:33:02ZNear-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions10.1038/s41467-021-21861-62041-1723https://doaj.org/article/c9a0fea19d904002a20ade4e1b3424d22021-03-01T00:00:00Zhttps://doi.org/10.1038/s41467-021-21861-6https://doaj.org/toc/2041-1723Here, a defect healing method is used to tune the height and width of the Schottky barrier at the interface between 2D metals and 2D semiconductors, leading to the realization of van der Waals rectifiers with enhanced performance.Xiankun ZhangBaishan LiuLi GaoHuihui YuXiaozhi LiuJunli DuJiankun XiaoYihe LiuLin GuQingliang LiaoZhuo KangZheng ZhangYue ZhangNature PortfolioarticleScienceQENNature Communications, Vol 12, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Xiankun Zhang Baishan Liu Li Gao Huihui Yu Xiaozhi Liu Junli Du Jiankun Xiao Yihe Liu Lin Gu Qingliang Liao Zhuo Kang Zheng Zhang Yue Zhang Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions
description	Here, a defect healing method is used to tune the height and width of the Schottky barrier at the interface between 2D metals and 2D semiconductors, leading to the realization of van der Waals rectifiers with enhanced performance.
format	article
author	Xiankun Zhang Baishan Liu Li Gao Huihui Yu Xiaozhi Liu Junli Du Jiankun Xiao Yihe Liu Lin Gu Qingliang Liao Zhuo Kang Zheng Zhang Yue Zhang
author_facet	Xiankun Zhang Baishan Liu Li Gao Huihui Yu Xiaozhi Liu Junli Du Jiankun Xiao Yihe Liu Lin Gu Qingliang Liao Zhuo Kang Zheng Zhang Yue Zhang
author_sort	Xiankun Zhang
title	Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions
title_short	Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions
title_full	Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions
title_fullStr	Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions
title_full_unstemmed	Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions
title_sort	near-ideal van der waals rectifiers based on all-two-dimensional schottky junctions
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/c9a0fea19d904002a20ade4e1b3424d2
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Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions

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