Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence

The fabrication of individual nanowire-based devices and their comprehensive electrical characterization remains a major challenge. Here, we present a symmetric Hall bar configuration for highly p-type germanium nanowires (GeNWs), fabricated by a top-down approach using electron beam lithography and...

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Autores principales:	Ahmad Echresh, Himani Arora, Florian Fuchs, Zichao Li, René Hübner, Slawomir Prucnal, Jörg Schuster, Peter Zahn, Manfred Helm, Shengqiang Zhou, Artur Erbe, Lars Rebohle, Yordan M. Georgiev
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	germanium nanowires Hall bar configuration Hall effect electrical characterization Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/ca545c4e95a34879bfdaf3b978cb6a31
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spelling	oai:doaj.org-article:ca545c4e95a34879bfdaf3b978cb6a312021-11-25T18:30:50ZElectrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence10.3390/nano111129172079-4991https://doaj.org/article/ca545c4e95a34879bfdaf3b978cb6a312021-10-01T00:00:00Zhttps://www.mdpi.com/2079-4991/11/11/2917https://doaj.org/toc/2079-4991The fabrication of individual nanowire-based devices and their comprehensive electrical characterization remains a major challenge. Here, we present a symmetric Hall bar configuration for highly p-type germanium nanowires (GeNWs), fabricated by a top-down approach using electron beam lithography and inductively coupled plasma reactive ion etching. The configuration allows two equivalent measurement sets to check the homogeneity of GeNWs in terms of resistivity and the Hall coefficient. The highest Hall mobility and carrier concentration of GeNWs at 5 K were in the order of 100 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msup><mi>cm</mi><mn>2</mn></msup><mo>/</mo><mrow><mo>(</mo><mi>Vs</mi><mo>)</mo></mrow></mrow></semantics></math></inline-formula> and <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>4</mn><mo>×</mo><msup><mn>10</mn><mn>19</mn></msup><mspace width="3.33333pt"></mspace><msup><mi>cm</mi><mrow><mo>−</mo><mn>3</mn></mrow></msup></mrow></semantics></math></inline-formula>, respectively. With a decreasing nanowire width, the resistivity increases and the carrier concentration decreases, which is attributed to carrier scattering in the region near the surface. By comparing the measured data with simulations, one can conclude the existence of a depletion region, which decreases the effective cross-section of GeNWs. Moreover, the resistivity of thin GeNWs is strongly influenced by the cross-sectional shape.Ahmad EchreshHimani AroraFlorian FuchsZichao LiRené HübnerSlawomir PrucnalJörg SchusterPeter ZahnManfred HelmShengqiang ZhouArtur ErbeLars RebohleYordan M. GeorgievMDPI AGarticlegermanium nanowiresHall bar configurationHall effectelectrical characterizationChemistryQD1-999ENNanomaterials, Vol 11, Iss 2917, p 2917 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	germanium nanowires Hall bar configuration Hall effect electrical characterization Chemistry QD1-999
spellingShingle	germanium nanowires Hall bar configuration Hall effect electrical characterization Chemistry QD1-999 Ahmad Echresh Himani Arora Florian Fuchs Zichao Li René Hübner Slawomir Prucnal Jörg Schuster Peter Zahn Manfred Helm Shengqiang Zhou Artur Erbe Lars Rebohle Yordan M. Georgiev Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence
description	The fabrication of individual nanowire-based devices and their comprehensive electrical characterization remains a major challenge. Here, we present a symmetric Hall bar configuration for highly p-type germanium nanowires (GeNWs), fabricated by a top-down approach using electron beam lithography and inductively coupled plasma reactive ion etching. The configuration allows two equivalent measurement sets to check the homogeneity of GeNWs in terms of resistivity and the Hall coefficient. The highest Hall mobility and carrier concentration of GeNWs at 5 K were in the order of 100 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msup><mi>cm</mi><mn>2</mn></msup><mo>/</mo><mrow><mo>(</mo><mi>Vs</mi><mo>)</mo></mrow></mrow></semantics></math></inline-formula> and <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>4</mn><mo>×</mo><msup><mn>10</mn><mn>19</mn></msup><mspace width="3.33333pt"></mspace><msup><mi>cm</mi><mrow><mo>−</mo><mn>3</mn></mrow></msup></mrow></semantics></math></inline-formula>, respectively. With a decreasing nanowire width, the resistivity increases and the carrier concentration decreases, which is attributed to carrier scattering in the region near the surface. By comparing the measured data with simulations, one can conclude the existence of a depletion region, which decreases the effective cross-section of GeNWs. Moreover, the resistivity of thin GeNWs is strongly influenced by the cross-sectional shape.
format	article
author	Ahmad Echresh Himani Arora Florian Fuchs Zichao Li René Hübner Slawomir Prucnal Jörg Schuster Peter Zahn Manfred Helm Shengqiang Zhou Artur Erbe Lars Rebohle Yordan M. Georgiev
author_facet	Ahmad Echresh Himani Arora Florian Fuchs Zichao Li René Hübner Slawomir Prucnal Jörg Schuster Peter Zahn Manfred Helm Shengqiang Zhou Artur Erbe Lars Rebohle Yordan M. Georgiev
author_sort	Ahmad Echresh
title	Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence
title_short	Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence
title_full	Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence
title_fullStr	Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence
title_full_unstemmed	Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence
title_sort	electrical characterization of germanium nanowires using a symmetric hall bar configuration: size and shape dependence
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/ca545c4e95a34879bfdaf3b978cb6a31
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Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence

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