On the mechanism of carrier recombination in downsized blue micro-LEDs
Abstract The mechanism of carrier recombination in downsized μ-LED chips from 100 × 100 to 10 × 10 μm2 on emission performance was systemically investigated. All photolithography processes for defining the μ-LED pattern were achieved by using a laser direct writing technique. This maskless technolog...
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| Autores principales: | , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/ca59de586c984864bf45bd195eede79b |
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| Sumario: | Abstract The mechanism of carrier recombination in downsized μ-LED chips from 100 × 100 to 10 × 10 μm2 on emission performance was systemically investigated. All photolithography processes for defining the μ-LED pattern were achieved by using a laser direct writing technique. This maskless technology achieved the glass-mask-free process, which not only can improve the exposure accuracy but also save the development time. The multi-functional SiO2 film as a passivation layer successfully reduced the leakage current density of μ-LED chips compared with the μ-LED chips without passivation layer. As decreasing the chip size to 10 × 10 μm2, the smallest chip size exhibited the highest ideality factor, which indicated the main carrier recombination at the high-defect-density zone in μ-LED chip leading to the decreased emission performance. The blue-shift phenomenon in the electroluminescence spectrum with decreasing the μ-LED chip size was due to the carrier screening effect and the band filling effect. The 10 × 10 μm2 μ-LED chip exhibited high EQE values in the high current density region with a less efficiency droop, and the max-EQE value was 18.8%. The luminance of 96 × 48 μ-LED array with the chip size of 20 × 20 μm2 exhibited a high value of 516 nits at the voltage of 3 V. |
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