60-GHz Half-Mode Substrate-Integrated Waveguide Bandpass Filter in 0.15-μm GaAs Technology

A compact 60-GHz on-chip bandpass filter (BPF) is presented using gallium arsenide (GaAs) technology. The miniaturization is achieved by the half-mode substrate-integrated waveguide (HMSIW) structure. Finally, a prototype of the BPF is fabricated and tested to validate the proposed idea, whose simul...

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Auteurs principaux: Xu-Juan Liu, Wen Wu, Kai-Da Xu, Ying-Jiang Guo, Qiang Chen
Format: article
Langue:EN
Publié: Frontiers Media S.A. 2021
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Accès en ligne:https://doaj.org/article/ca664db7506a4fd18f9c753594c9883c
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Résumé:A compact 60-GHz on-chip bandpass filter (BPF) is presented using gallium arsenide (GaAs) technology. The miniaturization is achieved by the half-mode substrate-integrated waveguide (HMSIW) structure. Finally, a prototype of the BPF is fabricated and tested to validate the proposed idea, whose simulated and measured results are in good agreement. The measurements show that it has a center frequency at 58.6 GHz with a bandwidth of 17.9%, and the minimum insertion loss within the passband is 1.2 dB. The chip, excluding the feedings, is only about 0.38λg × 0.58λg, where λg is the guided wavelength at the center frequency.