Loss in discharging atoms through artificial hole for fabricating metallic micro/nanowire by electromigration

The electromigration (EM) technique is a method that is used to ensure the physical growth of metallic micro/nanowires. In the EM technique, the atomic diffusion of metals is intentionally accelerated by controlling the input current and heating the substrate, thus forming a hillock owing to the acc...

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Autor principal:	Yasuhiro KIMURA
Formato:	article
Lenguaje:	EN
Publicado:	The Japan Society of Mechanical Engineers 2019
Materias:	electromigration micro/nanowire fabrication loss artificial hole threshold current Mechanical engineering and machinery TJ1-1570
Acceso en línea:	https://doaj.org/article/cac580521cad475d80f84640fa39acb0
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spelling	oai:doaj.org-article:cac580521cad475d80f84640fa39acb02021-11-29T05:34:41ZLoss in discharging atoms through artificial hole for fabricating metallic micro/nanowire by electromigration2187-974510.1299/mej.18-00269https://doaj.org/article/cac580521cad475d80f84640fa39acb02019-02-01T00:00:00Zhttps://www.jstage.jst.go.jp/article/mej/6/1/6_18-00269/_pdf/-char/enhttps://doaj.org/toc/2187-9745The electromigration (EM) technique is a method that is used to ensure the physical growth of metallic micro/nanowires. In the EM technique, the atomic diffusion of metals is intentionally accelerated by controlling the input current and heating the substrate, thus forming a hillock owing to the accumulation of atoms, which is transformed into small-diameter metallic micro/nanowires. The metallic micro/nanowires can be fabricated by discharging the atoms through a hole, which is artificially introduced in the passivation. The fabrication of metallic micro/nanowires has been successfully demonstrated using the EM technique, and the wire growth behavior is dependent on the characteristics of the artificial hole. However, very little information is available about the quantitative assessment of wire fabrication performance even though several experimental attempts have been conducted in prior studies. Additionally, the effect of structural parameters, such as the hole size, on the fabrication performance has not yet been adequately investigated. This study quantitatively evaluates the fabrication performance that is influenced by the hole size in terms of the growth rate of wires and threshold current used for fabrication. Based on the experimental results, the fabrication loss related to the hole size is experimentally revealed; further, an empirical formula for the fabrication loss has been developed. The optimal hole size to achieve the high performance of the micro/nanowire growth using the EM technique can be obtained with this finding.Yasuhiro KIMURAThe Japan Society of Mechanical Engineersarticleelectromigrationmicro/nanowirefabrication lossartificial holethreshold currentMechanical engineering and machineryTJ1-1570ENMechanical Engineering Journal, Vol 6, Iss 1, Pp 18-00269-18-00269 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	electromigration micro/nanowire fabrication loss artificial hole threshold current Mechanical engineering and machinery TJ1-1570
spellingShingle	electromigration micro/nanowire fabrication loss artificial hole threshold current Mechanical engineering and machinery TJ1-1570 Yasuhiro KIMURA Loss in discharging atoms through artificial hole for fabricating metallic micro/nanowire by electromigration
description	The electromigration (EM) technique is a method that is used to ensure the physical growth of metallic micro/nanowires. In the EM technique, the atomic diffusion of metals is intentionally accelerated by controlling the input current and heating the substrate, thus forming a hillock owing to the accumulation of atoms, which is transformed into small-diameter metallic micro/nanowires. The metallic micro/nanowires can be fabricated by discharging the atoms through a hole, which is artificially introduced in the passivation. The fabrication of metallic micro/nanowires has been successfully demonstrated using the EM technique, and the wire growth behavior is dependent on the characteristics of the artificial hole. However, very little information is available about the quantitative assessment of wire fabrication performance even though several experimental attempts have been conducted in prior studies. Additionally, the effect of structural parameters, such as the hole size, on the fabrication performance has not yet been adequately investigated. This study quantitatively evaluates the fabrication performance that is influenced by the hole size in terms of the growth rate of wires and threshold current used for fabrication. Based on the experimental results, the fabrication loss related to the hole size is experimentally revealed; further, an empirical formula for the fabrication loss has been developed. The optimal hole size to achieve the high performance of the micro/nanowire growth using the EM technique can be obtained with this finding.
format	article
author	Yasuhiro KIMURA
author_facet	Yasuhiro KIMURA
author_sort	Yasuhiro KIMURA
title	Loss in discharging atoms through artificial hole for fabricating metallic micro/nanowire by electromigration
title_short	Loss in discharging atoms through artificial hole for fabricating metallic micro/nanowire by electromigration
title_full	Loss in discharging atoms through artificial hole for fabricating metallic micro/nanowire by electromigration
title_fullStr	Loss in discharging atoms through artificial hole for fabricating metallic micro/nanowire by electromigration
title_full_unstemmed	Loss in discharging atoms through artificial hole for fabricating metallic micro/nanowire by electromigration
title_sort	loss in discharging atoms through artificial hole for fabricating metallic micro/nanowire by electromigration
publisher	The Japan Society of Mechanical Engineers
publishDate	2019
url	https://doaj.org/article/cac580521cad475d80f84640fa39acb0
work_keys_str_mv	AT yasuhirokimura lossindischargingatomsthroughartificialholeforfabricatingmetallicmicronanowirebyelectromigration
_version_	1718407673401049088

Loss in discharging atoms through artificial hole for fabricating metallic micro/nanowire by electromigration

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