Faradaic junction and isoenergetic charge transfer mechanism on semiconductor/semiconductor interfaces

Energy band alignment theory is used to understand interface charge transfer in semiconductor/semiconductor junctions but many abnormal results cannot be well explained. Here, the authors demonstrate a Faradaic junction theory with isoenergetic charge transfer at semiconductor/semiconductor interfac...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Mingzhi Chen, Hongzheng Dong, Mengfan Xue, Chunsheng Yang, Pin Wang, Yanliang Yang, Heng Zhu, Congping Wu, Yingfang Yao, Wenjun Luo, Zhigang Zou
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
Materias:
Q
Acceso en línea:https://doaj.org/article/cb73cf62d12b43b8b476e0cf1383983b
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
id oai:doaj.org-article:cb73cf62d12b43b8b476e0cf1383983b
record_format dspace
spelling oai:doaj.org-article:cb73cf62d12b43b8b476e0cf1383983b2021-11-08T11:10:48ZFaradaic junction and isoenergetic charge transfer mechanism on semiconductor/semiconductor interfaces10.1038/s41467-021-26661-62041-1723https://doaj.org/article/cb73cf62d12b43b8b476e0cf1383983b2021-11-01T00:00:00Zhttps://doi.org/10.1038/s41467-021-26661-6https://doaj.org/toc/2041-1723Energy band alignment theory is used to understand interface charge transfer in semiconductor/semiconductor junctions but many abnormal results cannot be well explained. Here, the authors demonstrate a Faradaic junction theory with isoenergetic charge transfer at semiconductor/semiconductor interfaces to explain these abnormal results.Mingzhi ChenHongzheng DongMengfan XueChunsheng YangPin WangYanliang YangHeng ZhuCongping WuYingfang YaoWenjun LuoZhigang ZouNature PortfolioarticleScienceQENNature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Mingzhi Chen
Hongzheng Dong
Mengfan Xue
Chunsheng Yang
Pin Wang
Yanliang Yang
Heng Zhu
Congping Wu
Yingfang Yao
Wenjun Luo
Zhigang Zou
Faradaic junction and isoenergetic charge transfer mechanism on semiconductor/semiconductor interfaces
description Energy band alignment theory is used to understand interface charge transfer in semiconductor/semiconductor junctions but many abnormal results cannot be well explained. Here, the authors demonstrate a Faradaic junction theory with isoenergetic charge transfer at semiconductor/semiconductor interfaces to explain these abnormal results.
format article
author Mingzhi Chen
Hongzheng Dong
Mengfan Xue
Chunsheng Yang
Pin Wang
Yanliang Yang
Heng Zhu
Congping Wu
Yingfang Yao
Wenjun Luo
Zhigang Zou
author_facet Mingzhi Chen
Hongzheng Dong
Mengfan Xue
Chunsheng Yang
Pin Wang
Yanliang Yang
Heng Zhu
Congping Wu
Yingfang Yao
Wenjun Luo
Zhigang Zou
author_sort Mingzhi Chen
title Faradaic junction and isoenergetic charge transfer mechanism on semiconductor/semiconductor interfaces
title_short Faradaic junction and isoenergetic charge transfer mechanism on semiconductor/semiconductor interfaces
title_full Faradaic junction and isoenergetic charge transfer mechanism on semiconductor/semiconductor interfaces
title_fullStr Faradaic junction and isoenergetic charge transfer mechanism on semiconductor/semiconductor interfaces
title_full_unstemmed Faradaic junction and isoenergetic charge transfer mechanism on semiconductor/semiconductor interfaces
title_sort faradaic junction and isoenergetic charge transfer mechanism on semiconductor/semiconductor interfaces
publisher Nature Portfolio
publishDate 2021
url https://doaj.org/article/cb73cf62d12b43b8b476e0cf1383983b
work_keys_str_mv AT mingzhichen faradaicjunctionandisoenergeticchargetransfermechanismonsemiconductorsemiconductorinterfaces
AT hongzhengdong faradaicjunctionandisoenergeticchargetransfermechanismonsemiconductorsemiconductorinterfaces
AT mengfanxue faradaicjunctionandisoenergeticchargetransfermechanismonsemiconductorsemiconductorinterfaces
AT chunshengyang faradaicjunctionandisoenergeticchargetransfermechanismonsemiconductorsemiconductorinterfaces
AT pinwang faradaicjunctionandisoenergeticchargetransfermechanismonsemiconductorsemiconductorinterfaces
AT yanliangyang faradaicjunctionandisoenergeticchargetransfermechanismonsemiconductorsemiconductorinterfaces
AT hengzhu faradaicjunctionandisoenergeticchargetransfermechanismonsemiconductorsemiconductorinterfaces
AT congpingwu faradaicjunctionandisoenergeticchargetransfermechanismonsemiconductorsemiconductorinterfaces
AT yingfangyao faradaicjunctionandisoenergeticchargetransfermechanismonsemiconductorsemiconductorinterfaces
AT wenjunluo faradaicjunctionandisoenergeticchargetransfermechanismonsemiconductorsemiconductorinterfaces
AT zhigangzou faradaicjunctionandisoenergeticchargetransfermechanismonsemiconductorsemiconductorinterfaces
_version_ 1718442376225095680