High performance gate tunable solar blind ultraviolet phototransistors based on amorphous Ga2O3 films grown by mist chemical vapor deposition

Abstract Gallium Oxide (Ga2O3) for solar‐blind photodetectors (PDs) has drawing increasing research interest in recent years because of its natural wide bandgap. However, the traditional material growth methods are always complicated and the corresponding PD performance is also not good enough. In t...

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Autores principales:	Yu Xu, Yaolin Cheng, Zhe Li, Qian Feng, Yachao Zhang, Dazheng Chen, Weidong Zhu, Jincheng Zhang, Chunfu Zhang, Yue Hao
Formato:	article
Lenguaje:	EN
Publicado:	Wiley-VCH 2021
Materias:	Ga2O3 thin film mist‐CVD solar‐blind phototransistor Materials of engineering and construction. Mechanics of materials TA401-492
Acceso en línea:	https://doaj.org/article/cb84fcabacbf4d0c8e63947e6481a6ec
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spelling	oai:doaj.org-article:cb84fcabacbf4d0c8e63947e6481a6ec2021-11-10T13:30:46ZHigh performance gate tunable solar blind ultraviolet phototransistors based on amorphous Ga2O3 films grown by mist chemical vapor deposition2688-401110.1002/nano.202100029https://doaj.org/article/cb84fcabacbf4d0c8e63947e6481a6ec2021-11-01T00:00:00Zhttps://doi.org/10.1002/nano.202100029https://doaj.org/toc/2688-4011Abstract Gallium Oxide (Ga2O3) for solar‐blind photodetectors (PDs) has drawing increasing research interest in recent years because of its natural wide bandgap. However, the traditional material growth methods are always complicated and the corresponding PD performance is also not good enough. In this work, amorphous Ga2O3 (a‐Ga2O3) thin film grown by mist chemical deposition applied as solar blind deep ultraviolet phototransistors (PTs) is investigated for the first time, to solve the problem of high cost and time‐consuming by traditional methods. Bottom‐gate a‐Ga2O3 three terminal thin film transistors (TFTs) are fabricated to boost their ultraviolet (UV) photodetection properties. Under the 254 nm UV illumination, the a‐Ga2O3 PTs demonstrates a very high responsivity of 2300 AW−1, external quantum efficiency of 1.12 × 106% and detectivity of 1.87 × 1014 Jones. Such field‐effect PTs with the ultrahigh performance address a significant step toward the feasibility and practicability of Ga2O3 PDs in the future applications.Yu XuYaolin ChengZhe LiQian FengYachao ZhangDazheng ChenWeidong ZhuJincheng ZhangChunfu ZhangYue HaoWiley-VCHarticleGa2O3 thin filmmist‐CVDsolar‐blind phototransistorMaterials of engineering and construction. Mechanics of materialsTA401-492ENNano Select, Vol 2, Iss 11, Pp 2112-2120 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Ga2O3 thin film mist‐CVD solar‐blind phototransistor Materials of engineering and construction. Mechanics of materials TA401-492
spellingShingle	Ga2O3 thin film mist‐CVD solar‐blind phototransistor Materials of engineering and construction. Mechanics of materials TA401-492 Yu Xu Yaolin Cheng Zhe Li Qian Feng Yachao Zhang Dazheng Chen Weidong Zhu Jincheng Zhang Chunfu Zhang Yue Hao High performance gate tunable solar blind ultraviolet phototransistors based on amorphous Ga2O3 films grown by mist chemical vapor deposition
description	Abstract Gallium Oxide (Ga2O3) for solar‐blind photodetectors (PDs) has drawing increasing research interest in recent years because of its natural wide bandgap. However, the traditional material growth methods are always complicated and the corresponding PD performance is also not good enough. In this work, amorphous Ga2O3 (a‐Ga2O3) thin film grown by mist chemical deposition applied as solar blind deep ultraviolet phototransistors (PTs) is investigated for the first time, to solve the problem of high cost and time‐consuming by traditional methods. Bottom‐gate a‐Ga2O3 three terminal thin film transistors (TFTs) are fabricated to boost their ultraviolet (UV) photodetection properties. Under the 254 nm UV illumination, the a‐Ga2O3 PTs demonstrates a very high responsivity of 2300 AW−1, external quantum efficiency of 1.12 × 106% and detectivity of 1.87 × 1014 Jones. Such field‐effect PTs with the ultrahigh performance address a significant step toward the feasibility and practicability of Ga2O3 PDs in the future applications.
format	article
author	Yu Xu Yaolin Cheng Zhe Li Qian Feng Yachao Zhang Dazheng Chen Weidong Zhu Jincheng Zhang Chunfu Zhang Yue Hao
author_facet	Yu Xu Yaolin Cheng Zhe Li Qian Feng Yachao Zhang Dazheng Chen Weidong Zhu Jincheng Zhang Chunfu Zhang Yue Hao
author_sort	Yu Xu
title	High performance gate tunable solar blind ultraviolet phototransistors based on amorphous Ga2O3 films grown by mist chemical vapor deposition
title_short	High performance gate tunable solar blind ultraviolet phototransistors based on amorphous Ga2O3 films grown by mist chemical vapor deposition
title_full	High performance gate tunable solar blind ultraviolet phototransistors based on amorphous Ga2O3 films grown by mist chemical vapor deposition
title_fullStr	High performance gate tunable solar blind ultraviolet phototransistors based on amorphous Ga2O3 films grown by mist chemical vapor deposition
title_full_unstemmed	High performance gate tunable solar blind ultraviolet phototransistors based on amorphous Ga2O3 films grown by mist chemical vapor deposition
title_sort	high performance gate tunable solar blind ultraviolet phototransistors based on amorphous ga2o3 films grown by mist chemical vapor deposition
publisher	Wiley-VCH
publishDate	2021
url	https://doaj.org/article/cb84fcabacbf4d0c8e63947e6481a6ec
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High performance gate tunable solar blind ultraviolet phototransistors based on amorphous Ga2O3 films grown by mist chemical vapor deposition

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