High performance gate tunable solar blind ultraviolet phototransistors based on amorphous Ga2O3 films grown by mist chemical vapor deposition

Abstract Gallium Oxide (Ga2O3) for solar‐blind photodetectors (PDs) has drawing increasing research interest in recent years because of its natural wide bandgap. However, the traditional material growth methods are always complicated and the corresponding PD performance is also not good enough. In t...

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Autores principales: Yu Xu, Yaolin Cheng, Zhe Li, Qian Feng, Yachao Zhang, Dazheng Chen, Weidong Zhu, Jincheng Zhang, Chunfu Zhang, Yue Hao
Formato: article
Lenguaje:EN
Publicado: Wiley-VCH 2021
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Acceso en línea:https://doaj.org/article/cb84fcabacbf4d0c8e63947e6481a6ec
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