High performance gate tunable solar blind ultraviolet phototransistors based on amorphous Ga2O3 films grown by mist chemical vapor deposition
Abstract Gallium Oxide (Ga2O3) for solar‐blind photodetectors (PDs) has drawing increasing research interest in recent years because of its natural wide bandgap. However, the traditional material growth methods are always complicated and the corresponding PD performance is also not good enough. In t...
Enregistré dans:
Auteurs principaux: | , , , , , , , , , |
---|---|
Format: | article |
Langue: | EN |
Publié: |
Wiley-VCH
2021
|
Sujets: | |
Accès en ligne: | https://doaj.org/article/cb84fcabacbf4d0c8e63947e6481a6ec |
Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|