Graphene/AlGaN/GaN RF Switch

RF switches, which use a combination of graphene and two-dimensional high-density electron gas (2DEG) in the AlGaN/GaN system, were proposed and studied in the frequency band from 10 MHz to 114.5 GHz. The switches were integrated into the coplanar waveguide, which allows them to be used in any syste...

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Autores principales:	Yevhen Yashchyshyn, Paweł Bajurko, Jakub Sobolewski, Pavlo Sai, Aleksandra Przewłoka, Aleksandra Krajewska, Paweł Prystawko, Maksym Dub, Wojciech Knap, Sergey Rumyantsev, Grzegorz Cywiński
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	AlGaN/GaN graphene switches two-dimensional high-density electron gas millimeter-wave devices Mechanical engineering and machinery TJ1-1570
Acceso en línea:	https://doaj.org/article/cbabf0660096441fa046235204206fc5
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id	oai:doaj.org-article:cbabf0660096441fa046235204206fc5
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spelling	oai:doaj.org-article:cbabf0660096441fa046235204206fc52021-11-25T18:23:16ZGraphene/AlGaN/GaN RF Switch10.3390/mi121113432072-666Xhttps://doaj.org/article/cbabf0660096441fa046235204206fc52021-10-01T00:00:00Zhttps://www.mdpi.com/2072-666X/12/11/1343https://doaj.org/toc/2072-666XRF switches, which use a combination of graphene and two-dimensional high-density electron gas (2DEG) in the AlGaN/GaN system, were proposed and studied in the frequency band from 10 MHz to 114.5 GHz. The switches were integrated into the coplanar waveguide, which allows them to be used in any system without the use of, e.g., bonding, flip-chip and other technologies and avoiding the matching problems. The on-state insertion losses for the designed switches were measured to range from 7.4 to 19.4 dB, depending on the frequency and switch design. Although, at frequencies above 70 GHz, the switches were less effective, the switching effect was still evident with an approximately 4 dB on–off ratio. The best switches exhibited rise and fall switching times of ~25 ns and ~17 ns, respectively. The use of such a switch can provide up to 20 MHz of bandwidth in time-modulated systems, which is an outstanding result for such systems. The proposed equivalent circuit describes well the switching characteristics and can be used to design switches with required parameters.Yevhen YashchyshynPaweł BajurkoJakub SobolewskiPavlo SaiAleksandra PrzewłokaAleksandra KrajewskaPaweł PrystawkoMaksym DubWojciech KnapSergey RumyantsevGrzegorz CywińskiMDPI AGarticleAlGaN/GaNgrapheneswitchestwo-dimensional high-density electron gasmillimeter-wave devicesMechanical engineering and machineryTJ1-1570ENMicromachines, Vol 12, Iss 1343, p 1343 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	AlGaN/GaN graphene switches two-dimensional high-density electron gas millimeter-wave devices Mechanical engineering and machinery TJ1-1570
spellingShingle	AlGaN/GaN graphene switches two-dimensional high-density electron gas millimeter-wave devices Mechanical engineering and machinery TJ1-1570 Yevhen Yashchyshyn Paweł Bajurko Jakub Sobolewski Pavlo Sai Aleksandra Przewłoka Aleksandra Krajewska Paweł Prystawko Maksym Dub Wojciech Knap Sergey Rumyantsev Grzegorz Cywiński Graphene/AlGaN/GaN RF Switch
description	RF switches, which use a combination of graphene and two-dimensional high-density electron gas (2DEG) in the AlGaN/GaN system, were proposed and studied in the frequency band from 10 MHz to 114.5 GHz. The switches were integrated into the coplanar waveguide, which allows them to be used in any system without the use of, e.g., bonding, flip-chip and other technologies and avoiding the matching problems. The on-state insertion losses for the designed switches were measured to range from 7.4 to 19.4 dB, depending on the frequency and switch design. Although, at frequencies above 70 GHz, the switches were less effective, the switching effect was still evident with an approximately 4 dB on–off ratio. The best switches exhibited rise and fall switching times of ~25 ns and ~17 ns, respectively. The use of such a switch can provide up to 20 MHz of bandwidth in time-modulated systems, which is an outstanding result for such systems. The proposed equivalent circuit describes well the switching characteristics and can be used to design switches with required parameters.
format	article
author	Yevhen Yashchyshyn Paweł Bajurko Jakub Sobolewski Pavlo Sai Aleksandra Przewłoka Aleksandra Krajewska Paweł Prystawko Maksym Dub Wojciech Knap Sergey Rumyantsev Grzegorz Cywiński
author_facet	Yevhen Yashchyshyn Paweł Bajurko Jakub Sobolewski Pavlo Sai Aleksandra Przewłoka Aleksandra Krajewska Paweł Prystawko Maksym Dub Wojciech Knap Sergey Rumyantsev Grzegorz Cywiński
author_sort	Yevhen Yashchyshyn
title	Graphene/AlGaN/GaN RF Switch
title_short	Graphene/AlGaN/GaN RF Switch
title_full	Graphene/AlGaN/GaN RF Switch
title_fullStr	Graphene/AlGaN/GaN RF Switch
title_full_unstemmed	Graphene/AlGaN/GaN RF Switch
title_sort	graphene/algan/gan rf switch
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/cbabf0660096441fa046235204206fc5
work_keys_str_mv	AT yevhenyashchyshyn graphenealganganrfswitch AT pawełbajurko graphenealganganrfswitch AT jakubsobolewski graphenealganganrfswitch AT pavlosai graphenealganganrfswitch AT aleksandraprzewłoka graphenealganganrfswitch AT aleksandrakrajewska graphenealganganrfswitch AT pawełprystawko graphenealganganrfswitch AT maksymdub graphenealganganrfswitch AT wojciechknap graphenealganganrfswitch AT sergeyrumyantsev graphenealganganrfswitch AT grzegorzcywinski graphenealganganrfswitch
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Graphene/AlGaN/GaN RF Switch

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