Some properties of Bi2Te3 and PbTe crystals and converters on their basis
Owning to the miniaturization of solid state electronic devices, the problem of studying the physical and physicochemical processes in low-dimensional condensed systems, in addition to scientific interest, is of particular practical significance. In theoretical terms, this is due to the fact that a...
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| Format: | article |
| Langue: | EN |
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D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2012
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| Accès en ligne: | https://doaj.org/article/cbcc6273f8ed4dee8e7fe2001a5f9f28 |
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| Résumé: | Owning to the miniaturization of solid state electronic devices, the problem of studying the physical and physicochemical processes in low-dimensional condensed systems, in addition to scientific interest, is of particular practical significance. In theoretical terms, this is due to the fact that a one-dimensional model has simpler solutions; in the experimental aspect, this is the possibility to obtain highly perfect single crystals, the size effects in which are more severe than, for example, in thin layers, because of two-dimensional limitations. In practical terms, these systems can be used in all modern fields of solid state electronics, because these materials make it possible to solve some problems in instrument engineering related to miniaturization, improving the accuracy and stability, and expanding the range of allowed climatic and mechanical effects. A small diameter of a microwire (MW) (1 • 10-6 m) provides a significant reduction in the weight and dimensions of elements made of MWs and decreases their mechanical, thermal, and electrical inertia. A solid insulation protects the core material from the interaction with the environment, which contributes to an increase in the stability, strength, and other parameters of sensors prepared on their basis. Narrow-gap semiconductors, such as lead telluride (PbTe) and bismuth telluride (Bi2Te3), are promising materials for thermoelectrics, optoelectronics, and laser technology. Therefore, systems of complex components based on them, in particular, thin films and MWs, have been intensively studied in recent years 1-5], the more so as the problem of production of converters on their basis cannot be considered solved at the moment. |
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