Some properties of Bi2Te3 and PbTe crystals and converters on their basis

Owning to the miniaturization of solid state electronic devices, the problem of studying the physical and physicochemical processes in low-dimensional condensed systems, in addition to scientific interest, is of particular practical significance. In theoretical terms, this is due to the fact that a...

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Autor principal:	Meglei, Dragoş
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2012
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/cbcc6273f8ed4dee8e7fe2001a5f9f28
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spelling	oai:doaj.org-article:cbcc6273f8ed4dee8e7fe2001a5f9f282021-11-21T12:01:23ZSome properties of Bi2Te3 and PbTe crystals and converters on their basis2537-63651810-648Xhttps://doaj.org/article/cbcc6273f8ed4dee8e7fe2001a5f9f282012-10-01T00:00:00Zhttps://mjps.nanotech.md/archive/2012/article/21329https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Owning to the miniaturization of solid state electronic devices, the problem of studying the physical and physicochemical processes in low-dimensional condensed systems, in addition to scientific interest, is of particular practical significance. In theoretical terms, this is due to the fact that a one-dimensional model has simpler solutions; in the experimental aspect, this is the possibility to obtain highly perfect single crystals, the size effects in which are more severe than, for example, in thin layers, because of two-dimensional limitations. In practical terms, these systems can be used in all modern fields of solid state electronics, because these materials make it possible to solve some problems in instrument engineering related to miniaturization, improving the accuracy and stability, and expanding the range of allowed climatic and mechanical effects. A small diameter of a microwire (MW) (1 • 10-6 m) provides a significant reduction in the weight and dimensions of elements made of MWs and decreases their mechanical, thermal, and electrical inertia. A solid insulation protects the core material from the interaction with the environment, which contributes to an increase in the stability, strength, and other parameters of sensors prepared on their basis. Narrow-gap semiconductors, such as lead telluride (PbTe) and bismuth telluride (Bi2Te3), are promising materials for thermoelectrics, optoelectronics, and laser technology. Therefore, systems of complex components based on them, in particular, thin films and MWs, have been intensively studied in recent years 1-5], the more so as the problem of production of converters on their basis cannot be considered solved at the moment.Meglei, DragoşD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 11, Iss 3, Pp 243-253 (2012)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Meglei, Dragoş Some properties of Bi2Te3 and PbTe crystals and converters on their basis
description	Owning to the miniaturization of solid state electronic devices, the problem of studying the physical and physicochemical processes in low-dimensional condensed systems, in addition to scientific interest, is of particular practical significance. In theoretical terms, this is due to the fact that a one-dimensional model has simpler solutions; in the experimental aspect, this is the possibility to obtain highly perfect single crystals, the size effects in which are more severe than, for example, in thin layers, because of two-dimensional limitations. In practical terms, these systems can be used in all modern fields of solid state electronics, because these materials make it possible to solve some problems in instrument engineering related to miniaturization, improving the accuracy and stability, and expanding the range of allowed climatic and mechanical effects. A small diameter of a microwire (MW) (1 • 10-6 m) provides a significant reduction in the weight and dimensions of elements made of MWs and decreases their mechanical, thermal, and electrical inertia. A solid insulation protects the core material from the interaction with the environment, which contributes to an increase in the stability, strength, and other parameters of sensors prepared on their basis. Narrow-gap semiconductors, such as lead telluride (PbTe) and bismuth telluride (Bi2Te3), are promising materials for thermoelectrics, optoelectronics, and laser technology. Therefore, systems of complex components based on them, in particular, thin films and MWs, have been intensively studied in recent years 1-5], the more so as the problem of production of converters on their basis cannot be considered solved at the moment.
format	article
author	Meglei, Dragoş
author_facet	Meglei, Dragoş
author_sort	Meglei, Dragoş
title	Some properties of Bi2Te3 and PbTe crystals and converters on their basis
title_short	Some properties of Bi2Te3 and PbTe crystals and converters on their basis
title_full	Some properties of Bi2Te3 and PbTe crystals and converters on their basis
title_fullStr	Some properties of Bi2Te3 and PbTe crystals and converters on their basis
title_full_unstemmed	Some properties of Bi2Te3 and PbTe crystals and converters on their basis
title_sort	some properties of bi2te3 and pbte crystals and converters on their basis
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2012
url	https://doaj.org/article/cbcc6273f8ed4dee8e7fe2001a5f9f28
work_keys_str_mv	AT megleidragos somepropertiesofbi2te3andpbtecrystalsandconvertersontheirbasis
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Some properties of Bi2Te3 and PbTe crystals and converters on their basis

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