Defect coupled MoSx sites over ZnIn2S4 nanosheets towards efficient H2 evolution

The inefficient separation of photoexcited electrons and holes as well as the lack of sufficient reactive sites are considered as the major factors hindering the catalytic activity of the semiconductors. Herein, we report an environmentally friendly and energy-saving method to realize the co-deposit...

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Autores principales: Zhaoyi Geng, Jikun Xu, Fen Guo, Baoan Fan, Lan Yuan
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Lenguaje:EN
Publicado: Elsevier 2021
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Acceso en línea:https://doaj.org/article/ccb38ebdfd6c4216ac18b6d76afe4a41
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spelling oai:doaj.org-article:ccb38ebdfd6c4216ac18b6d76afe4a412021-11-16T04:09:17ZDefect coupled MoSx sites over ZnIn2S4 nanosheets towards efficient H2 evolution1873-390510.1016/j.catcom.2021.106364https://doaj.org/article/ccb38ebdfd6c4216ac18b6d76afe4a412021-12-01T00:00:00Zhttp://www.sciencedirect.com/science/article/pii/S156673672100087Xhttps://doaj.org/toc/1873-3905The inefficient separation of photoexcited electrons and holes as well as the lack of sufficient reactive sites are considered as the major factors hindering the catalytic activity of the semiconductors. Herein, we report an environmentally friendly and energy-saving method to realize the co-deposition of amorphous MoSx onto ZnIn2S4 (ZIS) nanosheets, through which effectively enhanced performance of H2 generation from water reduction can be achieved. Furtherly, defect-poor ZIS and defect-rich O-doped ZIS (O-ZIS) were taken as the fabrication matrixes respectively, and larger enhancement resulting from MoSx loading over O-ZIS than that over ZIS was achieved, suggesting the synergistic effect that one plus one is greater than two, primarily due to the remarkably enhanced charge carriers separation and more abundant reaction sites for H2 production resulting from the defect engineering coupled surface active sites constructing. Notably, the optimal MoSx/O-ZIS achieved the H2 evolution rate of 15.32 mmol g−1 h−1, which is 17.8 and 8.5 times as that achieved over blank ZIS and O-ZIS, respectively. This work furnishes a facile paradigm that efficient composite materials can be facilely controlled towards boosted solar energy conversion, which significantly simplifies the activity majorization of the component-designed MoSx/ZIS photocatalysts.Zhaoyi GengJikun XuFen GuoBaoan FanLan YuanElsevierarticleDefect engineeringSurface active sitesCo-depositionPhotocatalytic H2 evolutionChemistryQD1-999ENCatalysis Communications, Vol 161, Iss , Pp 106364- (2021)
institution DOAJ
collection DOAJ
language EN
topic Defect engineering
Surface active sites
Co-deposition
Photocatalytic H2 evolution
Chemistry
QD1-999
spellingShingle Defect engineering
Surface active sites
Co-deposition
Photocatalytic H2 evolution
Chemistry
QD1-999
Zhaoyi Geng
Jikun Xu
Fen Guo
Baoan Fan
Lan Yuan
Defect coupled MoSx sites over ZnIn2S4 nanosheets towards efficient H2 evolution
description The inefficient separation of photoexcited electrons and holes as well as the lack of sufficient reactive sites are considered as the major factors hindering the catalytic activity of the semiconductors. Herein, we report an environmentally friendly and energy-saving method to realize the co-deposition of amorphous MoSx onto ZnIn2S4 (ZIS) nanosheets, through which effectively enhanced performance of H2 generation from water reduction can be achieved. Furtherly, defect-poor ZIS and defect-rich O-doped ZIS (O-ZIS) were taken as the fabrication matrixes respectively, and larger enhancement resulting from MoSx loading over O-ZIS than that over ZIS was achieved, suggesting the synergistic effect that one plus one is greater than two, primarily due to the remarkably enhanced charge carriers separation and more abundant reaction sites for H2 production resulting from the defect engineering coupled surface active sites constructing. Notably, the optimal MoSx/O-ZIS achieved the H2 evolution rate of 15.32 mmol g−1 h−1, which is 17.8 and 8.5 times as that achieved over blank ZIS and O-ZIS, respectively. This work furnishes a facile paradigm that efficient composite materials can be facilely controlled towards boosted solar energy conversion, which significantly simplifies the activity majorization of the component-designed MoSx/ZIS photocatalysts.
format article
author Zhaoyi Geng
Jikun Xu
Fen Guo
Baoan Fan
Lan Yuan
author_facet Zhaoyi Geng
Jikun Xu
Fen Guo
Baoan Fan
Lan Yuan
author_sort Zhaoyi Geng
title Defect coupled MoSx sites over ZnIn2S4 nanosheets towards efficient H2 evolution
title_short Defect coupled MoSx sites over ZnIn2S4 nanosheets towards efficient H2 evolution
title_full Defect coupled MoSx sites over ZnIn2S4 nanosheets towards efficient H2 evolution
title_fullStr Defect coupled MoSx sites over ZnIn2S4 nanosheets towards efficient H2 evolution
title_full_unstemmed Defect coupled MoSx sites over ZnIn2S4 nanosheets towards efficient H2 evolution
title_sort defect coupled mosx sites over znin2s4 nanosheets towards efficient h2 evolution
publisher Elsevier
publishDate 2021
url https://doaj.org/article/ccb38ebdfd6c4216ac18b6d76afe4a41
work_keys_str_mv AT zhaoyigeng defectcoupledmosxsitesoverznin2s4nanosheetstowardsefficienth2evolution
AT jikunxu defectcoupledmosxsitesoverznin2s4nanosheetstowardsefficienth2evolution
AT fenguo defectcoupledmosxsitesoverznin2s4nanosheetstowardsefficienth2evolution
AT baoanfan defectcoupledmosxsitesoverznin2s4nanosheetstowardsefficienth2evolution
AT lanyuan defectcoupledmosxsitesoverznin2s4nanosheetstowardsefficienth2evolution
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