Optimization of the Cryogenic Light-Emitting Diodes for High-Performance Broadband Terahertz Upconversion Imaging

High-performance terahertz (THz) imaging devices have drawn wide attention due to their significant application in a variety of application fields. Recently, the upconversion device based on the integrated homo-junction interfacial workfunction internal photoemission detector and light-emitting diod...

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Autores principales:	Peng Bai, Yueheng Zhang, Wenzhong Shen, Ning Yang, Weidong Chu
Formato:	article
Lenguaje:	EN
Publicado:	Frontiers Media S.A. 2021
Materias:	broadband upconversion THz pixelless imaging light extraction efficiency (LEE) internal photoemission (IPE) light-emitting diode (LED) Physics QC1-999
Acceso en línea:	https://doaj.org/article/cce3104471d84d7c8a30b416b5c7a4f6
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id	oai:doaj.org-article:cce3104471d84d7c8a30b416b5c7a4f6
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spelling	oai:doaj.org-article:cce3104471d84d7c8a30b416b5c7a4f62021-11-11T07:53:38ZOptimization of the Cryogenic Light-Emitting Diodes for High-Performance Broadband Terahertz Upconversion Imaging2296-424X10.3389/fphy.2021.774524https://doaj.org/article/cce3104471d84d7c8a30b416b5c7a4f62021-11-01T00:00:00Zhttps://www.frontiersin.org/articles/10.3389/fphy.2021.774524/fullhttps://doaj.org/toc/2296-424XHigh-performance terahertz (THz) imaging devices have drawn wide attention due to their significant application in a variety of application fields. Recently, the upconversion device based on the integrated homo-junction interfacial workfunction internal photoemission detector and light-emitting diode (HIWIP-LED) has emerged as a promising candidate for broadband THz upconversion pixelless imaging device. In this paper, systematical investigations on the cryogenic-temperature performances of the LED part in HIWIP-LED devices, including electroluminescence (EL) spectra and the EL efficiency, have been carried out by elaborating the radiative recombination mechanism in the quantum well, internal quantum efficiency, and the light extraction efficiency (LEE) both experimentally and theoretically. On this basis, we have further studied the operation mode of the HIWIP-LED and concluded that the LEE could directly determine the upconversion efficiency. A numerical simulation has been performed to optimize the LEE. Numerical results show that the device with a micro-lens geometry structure could significantly improve the LEE of the LED thereby increasing the upconversion efficiency. An optimal upconversion efficiency value of 0.12 W/W and a minimum noise equivalent power (NEP) of 14 pW/Hz1/2 are achieved using the micro-lens structure together with anti-reflection coating. This work gives a precise description of cryogenic LED performance in the HIWIP-LED device and provides an optimization method for the broadband HIWIP-LED THz upconversion pixelless imaging device.Peng BaiPeng BaiYueheng ZhangWenzhong ShenNing YangWeidong ChuFrontiers Media S.A.articlebroadband upconversionTHz pixelless imaginglight extraction efficiency (LEE)internal photoemission (IPE)light-emitting diode (LED)PhysicsQC1-999ENFrontiers in Physics, Vol 9 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	broadband upconversion THz pixelless imaging light extraction efficiency (LEE) internal photoemission (IPE) light-emitting diode (LED) Physics QC1-999
spellingShingle	broadband upconversion THz pixelless imaging light extraction efficiency (LEE) internal photoemission (IPE) light-emitting diode (LED) Physics QC1-999 Peng Bai Peng Bai Yueheng Zhang Wenzhong Shen Ning Yang Weidong Chu Optimization of the Cryogenic Light-Emitting Diodes for High-Performance Broadband Terahertz Upconversion Imaging
description	High-performance terahertz (THz) imaging devices have drawn wide attention due to their significant application in a variety of application fields. Recently, the upconversion device based on the integrated homo-junction interfacial workfunction internal photoemission detector and light-emitting diode (HIWIP-LED) has emerged as a promising candidate for broadband THz upconversion pixelless imaging device. In this paper, systematical investigations on the cryogenic-temperature performances of the LED part in HIWIP-LED devices, including electroluminescence (EL) spectra and the EL efficiency, have been carried out by elaborating the radiative recombination mechanism in the quantum well, internal quantum efficiency, and the light extraction efficiency (LEE) both experimentally and theoretically. On this basis, we have further studied the operation mode of the HIWIP-LED and concluded that the LEE could directly determine the upconversion efficiency. A numerical simulation has been performed to optimize the LEE. Numerical results show that the device with a micro-lens geometry structure could significantly improve the LEE of the LED thereby increasing the upconversion efficiency. An optimal upconversion efficiency value of 0.12 W/W and a minimum noise equivalent power (NEP) of 14 pW/Hz1/2 are achieved using the micro-lens structure together with anti-reflection coating. This work gives a precise description of cryogenic LED performance in the HIWIP-LED device and provides an optimization method for the broadband HIWIP-LED THz upconversion pixelless imaging device.
format	article
author	Peng Bai Peng Bai Yueheng Zhang Wenzhong Shen Ning Yang Weidong Chu
author_facet	Peng Bai Peng Bai Yueheng Zhang Wenzhong Shen Ning Yang Weidong Chu
author_sort	Peng Bai
title	Optimization of the Cryogenic Light-Emitting Diodes for High-Performance Broadband Terahertz Upconversion Imaging
title_short	Optimization of the Cryogenic Light-Emitting Diodes for High-Performance Broadband Terahertz Upconversion Imaging
title_full	Optimization of the Cryogenic Light-Emitting Diodes for High-Performance Broadband Terahertz Upconversion Imaging
title_fullStr	Optimization of the Cryogenic Light-Emitting Diodes for High-Performance Broadband Terahertz Upconversion Imaging
title_full_unstemmed	Optimization of the Cryogenic Light-Emitting Diodes for High-Performance Broadband Terahertz Upconversion Imaging
title_sort	optimization of the cryogenic light-emitting diodes for high-performance broadband terahertz upconversion imaging
publisher	Frontiers Media S.A.
publishDate	2021
url	https://doaj.org/article/cce3104471d84d7c8a30b416b5c7a4f6
work_keys_str_mv	AT pengbai optimizationofthecryogeniclightemittingdiodesforhighperformancebroadbandterahertzupconversionimaging AT pengbai optimizationofthecryogeniclightemittingdiodesforhighperformancebroadbandterahertzupconversionimaging AT yuehengzhang optimizationofthecryogeniclightemittingdiodesforhighperformancebroadbandterahertzupconversionimaging AT wenzhongshen optimizationofthecryogeniclightemittingdiodesforhighperformancebroadbandterahertzupconversionimaging AT ningyang optimizationofthecryogeniclightemittingdiodesforhighperformancebroadbandterahertzupconversionimaging AT weidongchu optimizationofthecryogeniclightemittingdiodesforhighperformancebroadbandterahertzupconversionimaging
_version_	1718439350808608768

Optimization of the Cryogenic Light-Emitting Diodes for High-Performance Broadband Terahertz Upconversion Imaging

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