ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors

Designing multi-value logic transistors with stable and reliable intermediate states remains a challenge. Here, the authors report the mobility edge quantization phenomenon via resonant hybridization of ZnO QDs embedded in amorphous ZnO domains to enable adjustable multi-value intermediate states.

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Autores principales:	Lynn Lee, Jeongwoon Hwang, Jin Won Jung, Jongchan Kim, Ho-In Lee, Sunwoo Heo, Minho Yoon, Sungju Choi, Nguyen Van Long, Jinseon Park, Jae Won Jeong, Jiyoung Kim, Kyung Rok Kim, Dae Hwan Kim, Seongil Im, Byoung Hun Lee, Kyeongjae Cho, Myung Mo Sung
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/cdaa0e68aac24d6e90d9af99e03b19ed
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spelling	oai:doaj.org-article:cdaa0e68aac24d6e90d9af99e03b19ed2021-12-02T17:33:11ZZnO composite nanolayer with mobility edge quantization for multi-value logic transistors10.1038/s41467-019-09998-x2041-1723https://doaj.org/article/cdaa0e68aac24d6e90d9af99e03b19ed2019-04-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-09998-xhttps://doaj.org/toc/2041-1723Designing multi-value logic transistors with stable and reliable intermediate states remains a challenge. Here, the authors report the mobility edge quantization phenomenon via resonant hybridization of ZnO QDs embedded in amorphous ZnO domains to enable adjustable multi-value intermediate states.Lynn LeeJeongwoon HwangJin Won JungJongchan KimHo-In LeeSunwoo HeoMinho YoonSungju ChoiNguyen Van LongJinseon ParkJae Won JeongJiyoung KimKyung Rok KimDae Hwan KimSeongil ImByoung Hun LeeKyeongjae ChoMyung Mo SungNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-9 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Lynn Lee Jeongwoon Hwang Jin Won Jung Jongchan Kim Ho-In Lee Sunwoo Heo Minho Yoon Sungju Choi Nguyen Van Long Jinseon Park Jae Won Jeong Jiyoung Kim Kyung Rok Kim Dae Hwan Kim Seongil Im Byoung Hun Lee Kyeongjae Cho Myung Mo Sung ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors
description	Designing multi-value logic transistors with stable and reliable intermediate states remains a challenge. Here, the authors report the mobility edge quantization phenomenon via resonant hybridization of ZnO QDs embedded in amorphous ZnO domains to enable adjustable multi-value intermediate states.
format	article
author	Lynn Lee Jeongwoon Hwang Jin Won Jung Jongchan Kim Ho-In Lee Sunwoo Heo Minho Yoon Sungju Choi Nguyen Van Long Jinseon Park Jae Won Jeong Jiyoung Kim Kyung Rok Kim Dae Hwan Kim Seongil Im Byoung Hun Lee Kyeongjae Cho Myung Mo Sung
author_facet	Lynn Lee Jeongwoon Hwang Jin Won Jung Jongchan Kim Ho-In Lee Sunwoo Heo Minho Yoon Sungju Choi Nguyen Van Long Jinseon Park Jae Won Jeong Jiyoung Kim Kyung Rok Kim Dae Hwan Kim Seongil Im Byoung Hun Lee Kyeongjae Cho Myung Mo Sung
author_sort	Lynn Lee
title	ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors
title_short	ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors
title_full	ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors
title_fullStr	ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors
title_full_unstemmed	ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors
title_sort	zno composite nanolayer with mobility edge quantization for multi-value logic transistors
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/cdaa0e68aac24d6e90d9af99e03b19ed
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ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors

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