ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors

Designing multi-value logic transistors with stable and reliable intermediate states remains a challenge. Here, the authors report the mobility edge quantization phenomenon via resonant hybridization of ZnO QDs embedded in amorphous ZnO domains to enable adjustable multi-value intermediate states.

Guardado en:

Detalles Bibliográficos
Autores principales:	Lynn Lee, Jeongwoon Hwang, Jin Won Jung, Jongchan Kim, Ho-In Lee, Sunwoo Heo, Minho Yoon, Sungju Choi, Nguyen Van Long, Jinseon Park, Jae Won Jeong, Jiyoung Kim, Kyung Rok Kim, Dae Hwan Kim, Seongil Im, Byoung Hun Lee, Kyeongjae Cho, Myung Mo Sung
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/cdaa0e68aac24d6e90d9af99e03b19ed
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

Sea el primero en dejar un comentario!

ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors

Ejemplares similares