ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors

ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors

Designing multi-value logic transistors with stable and reliable intermediate states remains a challenge. Here, the authors report the mobility edge quantization phenomenon via resonant hybridization of ZnO QDs embedded in amorphous ZnO domains to enable adjustable multi-value intermediate states.

Enregistré dans:
Détails bibliographiques
Auteurs principaux: Lynn Lee, Jeongwoon Hwang, Jin Won Jung, Jongchan Kim, Ho-In Lee, Sunwoo Heo, Minho Yoon, Sungju Choi, Nguyen Van Long, Jinseon Park, Jae Won Jeong, Jiyoung Kim, Kyung Rok Kim, Dae Hwan Kim, Seongil Im, Byoung Hun Lee, Kyeongjae Cho, Myung Mo Sung
Format: article
Langue:EN
Publié: Nature Portfolio 2019
Sujets:
Science
Q
Accès en ligne:https://doaj.org/article/cdaa0e68aac24d6e90d9af99e03b19ed
Tags: Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!

Internet

https://doaj.org/article/cdaa0e68aac24d6e90d9af99e03b19ed

Documents similaires