Global optimization of an encapsulated Si/SiO $$_2$$ 2 L3 cavity with a 43 million quality factor

Abstract We optimize a silica-encapsulated silicon L3 photonic crystal cavity for ultra-high quality factor by means of a global optimization strategy, where the closest holes surrounding the cavity are varied to minimize out-of-plane losses. We find an optimal value of $$Q_c=4.33\times 10^7$$ Q c =...

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Autores principales:	J. P. Vasco, V. Savona
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/cdccab600bf04d87b081a6570457901a
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spelling	oai:doaj.org-article:cdccab600bf04d87b081a6570457901a2021-12-02T17:15:28ZGlobal optimization of an encapsulated Si/SiO $$_2$$ 2 L3 cavity with a 43 million quality factor10.1038/s41598-021-89410-12045-2322https://doaj.org/article/cdccab600bf04d87b081a6570457901a2021-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-89410-1https://doaj.org/toc/2045-2322Abstract We optimize a silica-encapsulated silicon L3 photonic crystal cavity for ultra-high quality factor by means of a global optimization strategy, where the closest holes surrounding the cavity are varied to minimize out-of-plane losses. We find an optimal value of $$Q_c=4.33\times 10^7$$ Q c = 4.33 × 10 7 , which is predicted to be in the 2 million regime in presence of structural imperfections compatible with state-of-the-art silicon fabrication tolerances.J. P. VascoV. SavonaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-6 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q J. P. Vasco V. Savona Global optimization of an encapsulated Si/SiO $$_2$$ 2 L3 cavity with a 43 million quality factor
description	Abstract We optimize a silica-encapsulated silicon L3 photonic crystal cavity for ultra-high quality factor by means of a global optimization strategy, where the closest holes surrounding the cavity are varied to minimize out-of-plane losses. We find an optimal value of $$Q_c=4.33\times 10^7$$ Q c = 4.33 × 10 7 , which is predicted to be in the 2 million regime in presence of structural imperfections compatible with state-of-the-art silicon fabrication tolerances.
format	article
author	J. P. Vasco V. Savona
author_facet	J. P. Vasco V. Savona
author_sort	J. P. Vasco
title	Global optimization of an encapsulated Si/SiO $$_2$$ 2 L3 cavity with a 43 million quality factor
title_short	Global optimization of an encapsulated Si/SiO $$_2$$ 2 L3 cavity with a 43 million quality factor
title_full	Global optimization of an encapsulated Si/SiO $$_2$$ 2 L3 cavity with a 43 million quality factor
title_fullStr	Global optimization of an encapsulated Si/SiO $$_2$$ 2 L3 cavity with a 43 million quality factor
title_full_unstemmed	Global optimization of an encapsulated Si/SiO $$_2$$ 2 L3 cavity with a 43 million quality factor
title_sort	global optimization of an encapsulated si/sio $$_2$$ 2 l3 cavity with a 43 million quality factor
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/cdccab600bf04d87b081a6570457901a
work_keys_str_mv	AT jpvasco globaloptimizationofanencapsulatedsisio22l3cavitywitha43millionqualityfactor AT vsavona globaloptimizationofanencapsulatedsisio22l3cavitywitha43millionqualityfactor
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Global optimization of an encapsulated Si/SiO $$_2$$ 2 L3 cavity with a 43 million quality factor

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