Scalable high performance radio frequency electronics based on large domain bilayer MoS2

Large area two-dimensional materials show promise for applications in DC and RF flexible electronics. Here, the authors report RF transistors based on chemical vapor deposited bilayer MoS2 with 23 GHz extrinsic maximum oscillation frequency, and gigahertz mixers on flexible polyimide substrates.

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Autores principales: Qingguo Gao, Zhenfeng Zhang, Xiaole Xu, Jian Song, Xuefei Li, Yanqing Wu
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
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Acceso en línea:https://doaj.org/article/cdfd7cace7c24fe9812d9e633e8800c0
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spelling oai:doaj.org-article:cdfd7cace7c24fe9812d9e633e8800c02021-12-02T14:38:53ZScalable high performance radio frequency electronics based on large domain bilayer MoS210.1038/s41467-018-07135-82041-1723https://doaj.org/article/cdfd7cace7c24fe9812d9e633e8800c02018-11-01T00:00:00Zhttps://doi.org/10.1038/s41467-018-07135-8https://doaj.org/toc/2041-1723Large area two-dimensional materials show promise for applications in DC and RF flexible electronics. Here, the authors report RF transistors based on chemical vapor deposited bilayer MoS2 with 23 GHz extrinsic maximum oscillation frequency, and gigahertz mixers on flexible polyimide substrates.Qingguo GaoZhenfeng ZhangXiaole XuJian SongXuefei LiYanqing WuNature PortfolioarticleScienceQENNature Communications, Vol 9, Iss 1, Pp 1-8 (2018)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Qingguo Gao
Zhenfeng Zhang
Xiaole Xu
Jian Song
Xuefei Li
Yanqing Wu
Scalable high performance radio frequency electronics based on large domain bilayer MoS2
description Large area two-dimensional materials show promise for applications in DC and RF flexible electronics. Here, the authors report RF transistors based on chemical vapor deposited bilayer MoS2 with 23 GHz extrinsic maximum oscillation frequency, and gigahertz mixers on flexible polyimide substrates.
format article
author Qingguo Gao
Zhenfeng Zhang
Xiaole Xu
Jian Song
Xuefei Li
Yanqing Wu
author_facet Qingguo Gao
Zhenfeng Zhang
Xiaole Xu
Jian Song
Xuefei Li
Yanqing Wu
author_sort Qingguo Gao
title Scalable high performance radio frequency electronics based on large domain bilayer MoS2
title_short Scalable high performance radio frequency electronics based on large domain bilayer MoS2
title_full Scalable high performance radio frequency electronics based on large domain bilayer MoS2
title_fullStr Scalable high performance radio frequency electronics based on large domain bilayer MoS2
title_full_unstemmed Scalable high performance radio frequency electronics based on large domain bilayer MoS2
title_sort scalable high performance radio frequency electronics based on large domain bilayer mos2
publisher Nature Portfolio
publishDate 2018
url https://doaj.org/article/cdfd7cace7c24fe9812d9e633e8800c0
work_keys_str_mv AT qingguogao scalablehighperformanceradiofrequencyelectronicsbasedonlargedomainbilayermos2
AT zhenfengzhang scalablehighperformanceradiofrequencyelectronicsbasedonlargedomainbilayermos2
AT xiaolexu scalablehighperformanceradiofrequencyelectronicsbasedonlargedomainbilayermos2
AT jiansong scalablehighperformanceradiofrequencyelectronicsbasedonlargedomainbilayermos2
AT xuefeili scalablehighperformanceradiofrequencyelectronicsbasedonlargedomainbilayermos2
AT yanqingwu scalablehighperformanceradiofrequencyelectronicsbasedonlargedomainbilayermos2
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