Scalable high performance radio frequency electronics based on large domain bilayer MoS2

Large area two-dimensional materials show promise for applications in DC and RF flexible electronics. Here, the authors report RF transistors based on chemical vapor deposited bilayer MoS2 with 23 GHz extrinsic maximum oscillation frequency, and gigahertz mixers on flexible polyimide substrates.

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Bibliographic Details
Main Authors: Qingguo Gao, Zhenfeng Zhang, Xiaole Xu, Jian Song, Xuefei Li, Yanqing Wu
Format: article
Language:EN
Published: Nature Portfolio 2018
Subjects:
Q
Online Access:https://doaj.org/article/cdfd7cace7c24fe9812d9e633e8800c0
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