Precision measurement of electron-electron scattering in GaAs/AlGaAs using transverse magnetic focusing
Electron-electron scattering plays a crucial role in many solid state phenomena; however, the direct measurement of electron-electron scattering length is challenging. Here, the authors use transverse magnetic focusing to measure this quantity in high-mobility GaAs/AlGaAs heterostructures.
Guardado en:
Autores principales: | Adbhut Gupta, J. J. Heremans, Gitansh Kataria, Mani Chandra, S. Fallahi, G. C. Gardner, M. J. Manfra |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2021
|
Materias: | |
Acceso en línea: | https://doaj.org/article/ce1cf46b15274c9fbf5406097c90e52a |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Marginal metallic state at a fractional filling of ’8/5’ and ’4/3’ of Landau levels in the GaAs/AlGaAs 2D electron system
por: R. G. Mani, et al.
Publicado: (2021) -
Purcell Effect and Beaming of Emission in Hybrid AlGaAs Nanowires with GaAs Quantum Dots
por: Rodion R. Reznik, et al.
Publicado: (2021) -
Gate induced quantum wires in GaAs/AlGaAs heterostructures by cleaved edge deposition
por: L. Alt, et al.
Publicado: (2021) -
TCAD 2D numerical simulations for increasing efficiency of AlGaAs – GaAs Solar Cells
por: César Palacios A., et al.
Publicado: (2018) -
Mutual influence between current-induced giant magnetoresistance and radiation-induced magnetoresistance oscillations in the GaAs/AlGaAs 2DES
por: R. L. Samaraweera, et al.
Publicado: (2017)