Characterization of MOCVD-Prepared CIS Solar Cells

Chalcopyrite Cu(In,Ga)Se<sub>2</sub> (CIGS) solar cells prepared via metal-organic chemical vapor deposition (MOCVD) are one of the candidates for highly advanced photovoltaic devices. This is because of their effectiveness and potential for reducing production costs through large-scale...

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Autores principales:	Seung Hoon Lee, Gyu Hyun Lee, Hae-Seok Lee, Donghwan Kim, Yoonmook Kang
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	CIGS solar cell MOCVD MOCVD-prepared CIGS EBIC buried junction Technology T
Acceso en línea:	https://doaj.org/article/ceef055f58954675b3fb75d77dbd292d
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spelling	oai:doaj.org-article:ceef055f58954675b3fb75d77dbd292d2021-11-25T17:28:13ZCharacterization of MOCVD-Prepared CIS Solar Cells10.3390/en142277211996-1073https://doaj.org/article/ceef055f58954675b3fb75d77dbd292d2021-11-01T00:00:00Zhttps://www.mdpi.com/1996-1073/14/22/7721https://doaj.org/toc/1996-1073Chalcopyrite Cu(In,Ga)Se<sub>2</sub> (CIGS) solar cells prepared via metal-organic chemical vapor deposition (MOCVD) are one of the candidates for highly advanced photovoltaic devices. This is because of their effectiveness and potential for reducing production costs through large-scale production. However, research on MOCVD-prepared solar cells is progressing slower than that on other types of solar cells, primarily because the preparation of CuInSe<sub>2</sub> (CIS)-based films via MOCVD is relatively more sophisticated. In this study, we analyzed CIS solar cells prepared via three-stage MOCVD and processed with relatively simple precursors and techniques. We achieved an energy-conversion efficiency of 7.39% without applying a buffer layer. Instead, we applied a Cu-deficient layer to create a buried pn junction. Ultimately, we demonstrated that the fabrication of fully-MOCVD-processed CIS photovoltaic devices is feasible.Seung Hoon LeeGyu Hyun LeeHae-Seok LeeDonghwan KimYoonmook KangMDPI AGarticleCIGS solar cellMOCVDMOCVD-prepared CIGSEBICburied junctionTechnologyTENEnergies, Vol 14, Iss 7721, p 7721 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	CIGS solar cell MOCVD MOCVD-prepared CIGS EBIC buried junction Technology T
spellingShingle	CIGS solar cell MOCVD MOCVD-prepared CIGS EBIC buried junction Technology T Seung Hoon Lee Gyu Hyun Lee Hae-Seok Lee Donghwan Kim Yoonmook Kang Characterization of MOCVD-Prepared CIS Solar Cells
description	Chalcopyrite Cu(In,Ga)Se<sub>2</sub> (CIGS) solar cells prepared via metal-organic chemical vapor deposition (MOCVD) are one of the candidates for highly advanced photovoltaic devices. This is because of their effectiveness and potential for reducing production costs through large-scale production. However, research on MOCVD-prepared solar cells is progressing slower than that on other types of solar cells, primarily because the preparation of CuInSe<sub>2</sub> (CIS)-based films via MOCVD is relatively more sophisticated. In this study, we analyzed CIS solar cells prepared via three-stage MOCVD and processed with relatively simple precursors and techniques. We achieved an energy-conversion efficiency of 7.39% without applying a buffer layer. Instead, we applied a Cu-deficient layer to create a buried pn junction. Ultimately, we demonstrated that the fabrication of fully-MOCVD-processed CIS photovoltaic devices is feasible.
format	article
author	Seung Hoon Lee Gyu Hyun Lee Hae-Seok Lee Donghwan Kim Yoonmook Kang
author_facet	Seung Hoon Lee Gyu Hyun Lee Hae-Seok Lee Donghwan Kim Yoonmook Kang
author_sort	Seung Hoon Lee
title	Characterization of MOCVD-Prepared CIS Solar Cells
title_short	Characterization of MOCVD-Prepared CIS Solar Cells
title_full	Characterization of MOCVD-Prepared CIS Solar Cells
title_fullStr	Characterization of MOCVD-Prepared CIS Solar Cells
title_full_unstemmed	Characterization of MOCVD-Prepared CIS Solar Cells
title_sort	characterization of mocvd-prepared cis solar cells
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/ceef055f58954675b3fb75d77dbd292d
work_keys_str_mv	AT seunghoonlee characterizationofmocvdpreparedcissolarcells AT gyuhyunlee characterizationofmocvdpreparedcissolarcells AT haeseoklee characterizationofmocvdpreparedcissolarcells AT donghwankim characterizationofmocvdpreparedcissolarcells AT yoonmookkang characterizationofmocvdpreparedcissolarcells
_version_	1718412312805638144

Characterization of MOCVD-Prepared CIS Solar Cells

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