Thin-film synthesis of superconductor-on-insulator A15 vanadium silicide

Abstract We present a new method for thin-film synthesis of the superconducting A15 phase of vanadium silicide with critical temperature higher than 13 K. Interdiffusion between a metallic vanadium film and the underlying silicon device layer in a silicon-on-insulator substrate, at temperatures betw...

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Autores principales:	Wenrui Zhang, Anthony T. Bollinger, Ruoshui Li, Kim Kisslinger, Xiao Tong, Mingzhao Liu, Charles T. Black
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/cf0fa9ced23a4eb8bf55cf77ce5da8b9
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id	oai:doaj.org-article:cf0fa9ced23a4eb8bf55cf77ce5da8b9
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spelling	oai:doaj.org-article:cf0fa9ced23a4eb8bf55cf77ce5da8b92021-12-02T13:57:48ZThin-film synthesis of superconductor-on-insulator A15 vanadium silicide10.1038/s41598-021-82046-12045-2322https://doaj.org/article/cf0fa9ced23a4eb8bf55cf77ce5da8b92021-01-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-82046-1https://doaj.org/toc/2045-2322Abstract We present a new method for thin-film synthesis of the superconducting A15 phase of vanadium silicide with critical temperature higher than 13 K. Interdiffusion between a metallic vanadium film and the underlying silicon device layer in a silicon-on-insulator substrate, at temperatures between 650 and 750 °C, favors formation of the vanadium-rich A15 phase by limiting the supply of available silicon for the reaction. Energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and X-ray diffraction verify the stoichiometry and structure of the synthesized thin films. We measure superconducting critical currents of more than 106 amperes per square centimeter at low temperature in micron-scale bars fabricated from the material, and an upper critical magnetic field of 20 T, from which we deduce a superconducting coherence length of 4 nm, consistent with previously reported bulk values. The relatively high critical temperature of A15 vanadium silicide is an appealing property for use in silicon-compatible quantum devices and circuits.Wenrui ZhangAnthony T. BollingerRuoshui LiKim KisslingerXiao TongMingzhao LiuCharles T. BlackNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Wenrui Zhang Anthony T. Bollinger Ruoshui Li Kim Kisslinger Xiao Tong Mingzhao Liu Charles T. Black Thin-film synthesis of superconductor-on-insulator A15 vanadium silicide
description	Abstract We present a new method for thin-film synthesis of the superconducting A15 phase of vanadium silicide with critical temperature higher than 13 K. Interdiffusion between a metallic vanadium film and the underlying silicon device layer in a silicon-on-insulator substrate, at temperatures between 650 and 750 °C, favors formation of the vanadium-rich A15 phase by limiting the supply of available silicon for the reaction. Energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and X-ray diffraction verify the stoichiometry and structure of the synthesized thin films. We measure superconducting critical currents of more than 106 amperes per square centimeter at low temperature in micron-scale bars fabricated from the material, and an upper critical magnetic field of 20 T, from which we deduce a superconducting coherence length of 4 nm, consistent with previously reported bulk values. The relatively high critical temperature of A15 vanadium silicide is an appealing property for use in silicon-compatible quantum devices and circuits.
format	article
author	Wenrui Zhang Anthony T. Bollinger Ruoshui Li Kim Kisslinger Xiao Tong Mingzhao Liu Charles T. Black
author_facet	Wenrui Zhang Anthony T. Bollinger Ruoshui Li Kim Kisslinger Xiao Tong Mingzhao Liu Charles T. Black
author_sort	Wenrui Zhang
title	Thin-film synthesis of superconductor-on-insulator A15 vanadium silicide
title_short	Thin-film synthesis of superconductor-on-insulator A15 vanadium silicide
title_full	Thin-film synthesis of superconductor-on-insulator A15 vanadium silicide
title_fullStr	Thin-film synthesis of superconductor-on-insulator A15 vanadium silicide
title_full_unstemmed	Thin-film synthesis of superconductor-on-insulator A15 vanadium silicide
title_sort	thin-film synthesis of superconductor-on-insulator a15 vanadium silicide
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/cf0fa9ced23a4eb8bf55cf77ce5da8b9
work_keys_str_mv	AT wenruizhang thinfilmsynthesisofsuperconductoroninsulatora15vanadiumsilicide AT anthonytbollinger thinfilmsynthesisofsuperconductoroninsulatora15vanadiumsilicide AT ruoshuili thinfilmsynthesisofsuperconductoroninsulatora15vanadiumsilicide AT kimkisslinger thinfilmsynthesisofsuperconductoroninsulatora15vanadiumsilicide AT xiaotong thinfilmsynthesisofsuperconductoroninsulatora15vanadiumsilicide AT mingzhaoliu thinfilmsynthesisofsuperconductoroninsulatora15vanadiumsilicide AT charlestblack thinfilmsynthesisofsuperconductoroninsulatora15vanadiumsilicide
_version_	1718392287681052672

Thin-film synthesis of superconductor-on-insulator A15 vanadium silicide

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