Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing

Abstract State-of-the-art memristors are mostly formed by vertical metal–insulator–metal (MIM) structure, which rely on the formation of conductive filaments for resistive switching (RS). However, owing to the stochastic formation of filament, the set/reset voltage of vertical MIM memristors is diff...

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Autores principales:	Sifan Li, Bochang Li, Xuewei Feng, Li Chen, Yesheng Li, Li Huang, Xuanyao Fong, Kah-Wee Ang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/cf214c11237f4ba4ab2322a3ed1c0b56
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spelling	oai:doaj.org-article:cf214c11237f4ba4ab2322a3ed1c0b562021-12-02T14:40:26ZElectron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing10.1038/s41699-020-00190-02397-7132https://doaj.org/article/cf214c11237f4ba4ab2322a3ed1c0b562021-01-01T00:00:00Zhttps://doi.org/10.1038/s41699-020-00190-0https://doaj.org/toc/2397-7132Abstract State-of-the-art memristors are mostly formed by vertical metal–insulator–metal (MIM) structure, which rely on the formation of conductive filaments for resistive switching (RS). However, owing to the stochastic formation of filament, the set/reset voltage of vertical MIM memristors is difficult to control, which results in poor temporal and spatial switching uniformity. Here, a two-terminal lateral memristor based on electron-beam-irradiated rhenium disulfide (ReS2) is realized, which unveils a resistive switching mechanism based on Schottky barrier height (SBH) modulation. The devices exhibit a forming-free, stable gradual RS characteristic, and simultaneously achieve a small transition voltage variation during positive and negative sweeps (6.3%/5.3%). The RS is attributed to the motion of sulfur vacancies induced by voltage bias in the device, which modulates the ReS2/metal SBH. The gradual SBH modulation stabilizes the temporal variation in contrast to the abrupt RS in MIM-based memristors. Moreover, the emulation of long-term synaptic plasticity of biological synapses is demonstrated using the device, manifesting its potential as artificial synapse for energy-efficient neuromorphic computing applications.Sifan LiBochang LiXuewei FengLi ChenYesheng LiLi HuangXuanyao FongKah-Wee AngNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ChemistryQD1-999ENnpj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999 Sifan Li Bochang Li Xuewei Feng Li Chen Yesheng Li Li Huang Xuanyao Fong Kah-Wee Ang Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing
description	Abstract State-of-the-art memristors are mostly formed by vertical metal–insulator–metal (MIM) structure, which rely on the formation of conductive filaments for resistive switching (RS). However, owing to the stochastic formation of filament, the set/reset voltage of vertical MIM memristors is difficult to control, which results in poor temporal and spatial switching uniformity. Here, a two-terminal lateral memristor based on electron-beam-irradiated rhenium disulfide (ReS2) is realized, which unveils a resistive switching mechanism based on Schottky barrier height (SBH) modulation. The devices exhibit a forming-free, stable gradual RS characteristic, and simultaneously achieve a small transition voltage variation during positive and negative sweeps (6.3%/5.3%). The RS is attributed to the motion of sulfur vacancies induced by voltage bias in the device, which modulates the ReS2/metal SBH. The gradual SBH modulation stabilizes the temporal variation in contrast to the abrupt RS in MIM-based memristors. Moreover, the emulation of long-term synaptic plasticity of biological synapses is demonstrated using the device, manifesting its potential as artificial synapse for energy-efficient neuromorphic computing applications.
format	article
author	Sifan Li Bochang Li Xuewei Feng Li Chen Yesheng Li Li Huang Xuanyao Fong Kah-Wee Ang
author_facet	Sifan Li Bochang Li Xuewei Feng Li Chen Yesheng Li Li Huang Xuanyao Fong Kah-Wee Ang
author_sort	Sifan Li
title	Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing
title_short	Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing
title_full	Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing
title_fullStr	Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing
title_full_unstemmed	Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing
title_sort	electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/cf214c11237f4ba4ab2322a3ed1c0b56
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Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing

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